Semiconductor integrated circuit manufacturing method and bonding machine used for it

ABSTRACT

To stabilize the form of a letter S of an inner lead after bonding in a method of manufacturing μBGA•IC in which a chip is fixed via an insulating film on a tape carrier on one main surface of which plural inner leads are laid and each electrode pad of the chip is bonded to each inner lead, when the inner lead is bonded to the electrode pad, first, the chip is supplied in a fixed position for a bonding tool using a sprocket hole of the tape carrier. Next, the respective positions of the inner lead and the electrode pad are recognized using a feature lead and an electrode pad. Afterward, the center line of the inner lead is recognized, the inner lead is touched to the chip by the bonding tool and after the inner lead is pushed in the direction of the base and bent in the form of a letter S, the end of the inner lead is bonded to the electrode pad by thermocompression by the bonding tool.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to the manufacturing engineering ofa semiconductor device, particularly relates to bonding technique forbonding an inner lead laid on a carrier to an electrode pad formed on asemiconductor chip (hereinafter called chip) and for example, relates tobonding technique effective when the bonding technique is utilized for amethod of manufacturing a semiconductor integrated circuit (hereinaftercalled IC) provided with a chip-sized package or a chip scale package(hereinafter called CSP) in size equal to or approximately equal to thesize of a chip.

[0002] As electronic equipment using IC is miniaturized and thinned, thereduction of an IC package is desired. Various CSPs are developed tomeet the above demand and as the example, a micro ball grid arraypackage (hereinafter called μBGA) constituted as follows can be given.That is, a tape carrier is mechanically connected on the main surface onthe side of an electrode pad of a chip via an insulating film, eachinner lead laid on the tape carrier is bonded to each electrode pad ofthe chip and a bump as each external terminal is soldered to each outerlead and protruded.

[0003] For a method of bonding an inner lead in μBGA, there is a singlepoint bonding method (hereinafter called only bonding method) ofsuccessively welding multiple inner leads one at a time on eachelectrode pad arranged on the overall chip with pressure by a bondingtool.

[0004] CSP is described on pages 112 and 113 of a monthly,“Semiconductor World” published in May, 1995 by Press Journal.

[0005] For an example describing a method of bonding a memory chip to aTAB package in which when a memory chip is mounted in a tape automatedbonding (TAB) type package according to a lead on chip method based upona film carrier, no deterioration in the strength of bonding caused bythe dislocation of bonding occurs, further a forming metallic mold andothers are not required and the cost is low, there is Japanese PatentApplication Laid-Open No. Hei 6-13428. In the above bonding method,after an inner lead is bent and transformed by a bonding tool beforebonding, the inner lead is pressurized by the bonding tool and bonded toan electrode pad of a chip.

SUMMARY OF THE INVENTION

[0006] However, it is clarified by the inventor that in the abovebonding method, there is a problem that the center line of an inner leadcannot be recognized by an image recognition device because an electrodepad is located right under an inner lead.

[0007] Also, it is clarified by the inventor that in the above bondingmethod, there is a problem that the looped form of each inner lead afterbonding is different because an error occurs in an interval between aninner lead and an electrode pad successively bonded by a bonding toolwhen a chip mechanically connected to an insulating film is tilted.

[0008] Further, it is clarified by the inventor that in the abovebonding method, there is a problem that as an inner lead horizontallyextended is bent and transformed by a bonding tool, the inner lead isdistorted, stress is left in the inner lead after inner lead bonding andas a result, when stress generated by difference in the coefficient ofthermal expansion (hereinafter called thermal stress) operates in atemperature cycle acceleration test and others, a part in which stressis left of the inner lead is cracked.

[0009] An object of the present invention is to provide bondingtechnique in which the center line of an inner lead can be recognizedindependent of an electrode pad.

[0010] Another object of the present invention is to provide bondingtechnique in which a looped form after bonding can be stabilized.

[0011] Another object of the present invention is to provide bondingtechnique in which stress can be prevented from being left in an innerlead after inner lead bonding.

[0012] Another object of the present invention is to provide bondingtechnique in which manufacturing based upon a tape can be realized bysecuring alignment based upon a tape.

[0013] The above objects, other objects, and the new characteristics ofthe present invention will be clarified from the description in thisspecification and attached drawings.

[0014] The outline of typical ones of inventions disclosed in thepresent invention will be described below.

[0015] That is, a method of manufacturing a semiconductor integratedcircuit in which a semiconductor chip is mechanically connected to acarrier on one main surface of which plural inner leads are laid via aninsulating film and each electrode pad of the semiconductor chip isbonded to the above each inner lead is characterized in that when theabove inner lead is bonded to the above electrode pad, the position ofthe inner lead is observed individually or collectively and the innerlead is transformed by a bonding tool and bonded to the electrode padbased upon the result of the observation.

[0016] As an inner lead is transformed by a bonding tool based upon theobservation of the position of the inner lead according to the abovemeans, the inner lead can be precisely bonded to an electrode pad.

[0017] For the outline of the other invention, in a method ofmanufacturing μBGA•IC in which to stabilize the form of a letter S of aninner lead after bonding, a chip is fixed to a tape carrier on one mainsurface of which plural inner leads are laid via an insulating film andeach electrode pad of the chip is bonded to each inner lead, when aninner lead is bonded to an electrode pad, first, a chip is supplied in afixed position for a bonding tool using a sprocket hole of a tapecarrier. Next, the respective positions of the inner lead and theelectrode are recognized using a feature lead and the electrode pad.Afterward, after the center line of the inner lead is recognized, theinner lead is touched to the chip by the bonding tool, pressed in thedirection of the base and bent in the form of a letter S, the end of theinner lead is bonded to the electrode pad by thermocompression by thebonding tool.

[0018] The other outline of typical ones of inventions disclosed in thepresent invention will be described below.

[0019] 1. A bonding method in which a semiconductor chip is mechanicallyconnected to a carrier on one main surface of which a group of innerleads are laid via an insulating film and after each electrode pad ofthe above semiconductor chip is aligned with each inner lead, each innerlead is bonded to each electrode pad of the semiconductor chip by abonding tool and which is characterized by being provided with an imagecapturing process for capturing an image of the above inner lead havingthe above electrode pad as a background, an inner lead recognizingmeasuring line setting process for setting at least one image scanningline including the above electrode pad-and at least one image scanningline on each side of the above electrode pad as each inner leadrecognizing measuring line out of image scanning lines respectivelyperpendicular to the inner lead in the above captured image, a luminancemeasuring process for measuring luminance at each point on each scanningline every the above each inner lead recognizing measuring line, aforming process for adding luminance on the above each inner leadrecognizing measuring line every same point and forming an addedluminance distribution waveform, and a judging process for setting athreshold value for the above added luminance distribution waveform,calculating the center of gravity in an area equal to or larger than thethreshold value and judging the center line of the above inner lead.

[0020] 2. A bonding method in which a semiconductor chip is mechanicallyconnected to a carrier on one main surface of which a group of innerleads are laid via an insulating film and after each electrode pad ofthe above semiconductor chip is aligned with each inner lead, each innerlead is bonded to each electrode pad of the semiconductor chip by abonding tool and which is characterized by being provided with an imagecapturing process for capturing an image of the above inner lead havingthe above electrode pad as a background, an inner lead recognizingmeasuring line setting process for setting at least one image scanningline including the above electrode pad-and at least one image scanningline on each side of the above electrode pad as each inner leadrecognizing measuring line out of image scanning lines respectivelyperpendicular to the inner lead in the above captured image, a luminancemeasuring process for measuring luminance at each point on each scanningline every the above each inner lead recognizing measuring line, aforming process for setting a threshold value every the above each innerlead recognizing measuring line and forming each threshold valueexceeding luminance distribution waveform, and a judging process foradding the above each threshold value exceeding luminance distributionwaveform every same point, forming an added threshold value exceedingluminance distribution waveform, calculating the center of gravity in anarea equal to or larger than the threshold value and judging the centerline of the above inner lead.

[0021] 3. A bonding method in which a semiconductor chip is mechanicallyconnected to a carrier on one main surface of which a group of innerleads are laid via an insulating film and after each electrode pad ofthe above semiconductor chip is aligned with each inner lead, each innerlead is bonded to each electrode pad of the semiconductor chip by abonding tool and which is characterized by being provided with an imagecapturing process for capturing an image corresponding to the aboveinner lead and the above electrode pad from the lateral direction of theabove carrier and semiconductor chip, an inner lead recognizingmeasuring line setting process for setting at least one image scanningline corresponding to the above electrode pad and at least one imagescanning line on each side of the image corresponding to the aboveelectrode pad as each inner lead recognizing measuring line out of imagescanning lines respectively perpendicular to the inner lead in the abovecaptured image, a luminance measuring process for measuring luminance ateach point on each scanning line every the above each inner leadrecognizing measuring line, a forming process for adding luminance onthe above each inner lead recognizing measuring line every same pointand forming an added luminance distribution waveform, and a judgingprocess for setting a threshold value for the above added luminancedistribution waveform, calculating the center of gravity in an areaequal to or larger than the threshold value and judging the center linein thickness of the above inner lead.

[0022] 4. A bonding method in which a semiconductor chip is mechanicallyconnected to a carrier on one main surface of which a group of innerleads are laid via an insulating film and after each electrode pad ofthe above semiconductor chip is aligned with each inner lead, each innerlead is bonded to each electrode pad of the semiconductor chip by abonding tool and which is characterized by being provided with an imagecapturing process for capturing an image corresponding to the aboveinner lead and the above electrode pad from the lateral direction of theabove carrier and semiconductor chip, an inner lead recognizingmeasuring line setting process for setting at least one image scanningline corresponding to the above electrode pad and at least one imagescanning line on each side of the image corresponding to the aboveelectrode pad as each inner lead recognizing measuring line out of imagescanning lines respectively perpendicular to the inner lead in the abovecaptured image, a luminance measuring process for measuring luminance ateach point on each scanning line every the above each inner leadrecognizing measuring line, a forming process for setting a thresholdvalue every the above each inner lead recognizing measuring line andforming each threshold value exceeding luminance distribution waveform,and a judging process for adding the above each threshold valueexceeding luminance distribution waveform every same point, forming anadded threshold value exceeding luminance distribution waveform,calculating the center of gravity in an area equal to or larger than thethreshold value and judging the center line in thickness of the aboveinner lead.

[0023] 5. A bonding machine by the bonding tool of which each inner leadaligned with each electrode pad is bonded to each electrode pad of asemiconductor chip mechanically connected to a carrier on one mainsurface of which a group of inner leads are laid via an insulating filmand which is characterized by being provided with an image capturingdevice for capturing an image of the above inner lead having the aboveelectrode pad as a background, an inner lead recognizing measuring linesetting section for setting at least one image scanning line includingthe above electrode pad and at least one image scanning line on eachside of the above electrode pad as each inner lead recognizing measuringline out of image scanning lines respectively perpendicular to the innerlead in the above captured image, a luminance measuring section formeasuring luminance at each point on each scanning line every the aboveeach inner lead recognizing measuring line, a forming section for addingluminance on the above each inner lead recognizing measuring line everysame point and forming an added luminance distribution waveform, and ajudging process for setting a threshold value for the above addedluminance distribution waveform, calculating the center of gravity in anarea equal to or larger than the threshold value and judging the centerline of the above inner lead.

[0024] 6. A bonding machine by the bonding tool of which each inner leadaligned with each electrode pad is bonded to each electrode pad of asemiconductor chip mechanically connected to a carrier on one mainsurface of which a group of inner leads are laid via an insulating filmand which is characterized by being provided with an imagecapturing-device for capturing an image corresponding to the above innerlead and the above electrode pad from the lateral direction of the abovecarrier and semiconductor chip, an inner lead recognizing measuring linesetting section for setting at least one image scanning linecorresponding to the above electrode pad and at least one image scanningline on each side of the image corresponding to the above electrode padas each inner lead recognizing measuring line out of image scanninglines respectively perpendicular to the inner lead in the above capturedimage, a luminance measuring section for measuring luminance at eachpoint on each scanning line every the above each inner lead recognizingmeasuring line, a forming section for adding luminance on the above eachinner lead recognizing measuring line every same point and forming anadded luminance distribution waveform, and a judging section for settinga threshold value for the above added luminance distribution waveform,calculating the center of gravity in an area equal to or larger than thethreshold value and judging the center line in thickness of the aboveinner lead.

[0025] 7. A bonding method in which a semiconductor chip is mechanicallyconnected to a carrier on one main surface of which a group of innerleads are laid via an insulating film and each inner lead is bonded toeach electrode pad of the above semiconductor chip by a bonding tool andwhich is characterized in-that before the above each inner lead isbonded to each electrode pad of the above semiconductor chip by abonding tool, a height from the surface including the above group ofelectrode pads of the semiconductor chip to the above bonding tool ismeasured and bonding by the bonding tool is executed based upon themeasured height.

[0026] 8. A bonding method according to Paragraph 7 characterized inthat the above measurement of the height is executed by touching theabove bonding tool to the surface including the above group of electrodepads of the above semiconductor chip via the above inner lead.

[0027] 9. A bonding method according to Paragraph 7 characterized inthat the above measurement of the height is executed by touching theabove bonding tool to at least three points on the surface including theabove group of electrode pads of the above semiconductor chip andacquiring the degree of parallelization of the above semiconductor chip.

[0028] 10. A bonding method according to Paragraph 7 characterized inthat the measurement of the height of the above semiconductor chip isexecuted by detecting the surface including the above group of electrodepads of the semiconductor chip by a non-contact sensor.

[0029] 11. A bonding machine by the bonding tool of which each innerlead is bonded to each electrode pad of a semiconductor chipmechanically connected to a carrier on one main surface of which a groupof inner leads are laid via an insulating film and which ischaracterized in that before the above each inner lead is bonded to eachelectrode pad of the above semiconductor chip by the bonding tool, aheight from the surface including the above group of electrode pads ofthe semiconductor chip to the above bonding tool is measured and bondingby the bonding tool is executed based upon the measured height.

[0030] 12. A bonding machine according to Paragraph 11 characterized inthat the above height is measured by touching the above bonding tool tothe surface including the above group of electrode pads of the abovesemiconductor chip via each inner lead.

[0031] 13. A bonding machine according to Paragraph 11 characterized inthat the above height is measured by touching the above bonding tool toat least three points on the surface including the above group ofelectrode pads of the above semiconductor chip and acquiring the degreeof parallelization of the semiconductor chip.

[0032] 14. A bonding machine according to Paragraph 11 characterized inthat the height of the above semiconductor chip is measured by detectingthe surface including the above group of electrode pads of the abovesemiconductor chip by a non-contact sensor.

[0033] 15. A method of manufacturing a semiconductor integrated circuitin which a semiconductor chip is mechanically connected to a carrier onone main surface of which plural inner leads are laid via an insulatingfilm and each electrode pad of the semiconductor chip is bonded to eachinner lead and which is characterized in that when the above inner leadis bonded to the above electrode pad, the position of the inner lead isobserved individually or collectively, the inner lead is transformed bya bonding tool based upon the result of the observation and bonded tothe electrode pad.

[0034] 16. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 15 characterized by being provided with aconnecting process for mechanically connecting the above semiconductorchip to the above carrier via the above insulating film and a bondingprocess for observing the position of the above inner lead individuallyor collectively, transforming the inner lead by the above bonding toolbased upon the result of the observation and bonding the inner lead tothe above electrode pad.

[0035] 17. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 15 characterized in that before the above innerlead is bonded to the above electrode pad, a regular part regularlyarranged on the above carrier is measured and the above semiconductorchip and the above bonding tool are aligned based upon the measurement.

[0036] 18. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 15 characterized in that a feature lead arrangedbeforehand on the above carrier and a feature pad arranged beforehand onthe above semiconductor chip are measured and the respective positionsof the above inner lead and the semiconductor chip are recognized basedupon the measurement.

[0037] 19. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 15 characterized in that the image of the aboveinner lead is captured and the position of the above inner lead ismeasured based upon the captured image.

[0038] 20. A bonding machine used for a method of manufacturing asemiconductor integrated circuit in which a semiconductor chip ismechanically connected to a carrier on one main surface of which pluralinner leads are laid via an insulating film and each electrode pad ofthe semiconductor chip is bonded to above each inner lead and which ischaracterized in that when the above inner lead is bonded to aboveelectrode pad, the position of the inner lead is observed individuallyor collectively, the inner lead is transformed by a bonding tool basedupon the result of the observation and bonded to the electrode pad.

[0039] 21. A bonding machine according to Paragraph 20 characterized bybeing provided with an observation device for observing the position ofthe above inner lead individually or collectively and a controller fortransforming the inner lead by the above bonding tool based upon theresult of the observation and bonding it to the above electrode pad.

[0040] 22. A bonding machine according to Paragraph 20 characterized bybeing provided with an observation device for observing a regular partregularly arranged on the above carrier before the above inner lead isbonded to the above electrode pad and a controller for aligning theabove semiconductor chip and the above bonding tool based upon theobservation.

[0041] 23. A bonding machine according to Paragraph 20 characterized bybeing provided with an observation device for observing a feature leadbeforehand arranged on the above carrier and a feature pad beforehandarranged on the above semiconductor chip and a controller forrecognizing the respective positions of the above inner lead and thesemiconductor chip based upon the observation.

[0042] 24. A bonding machine according to Paragraph 20 characterized bybeing provided with an image capturing device for capturing the image ofthe above inner lead and a controller for observing the position of theinner lead based upon the captured image.

[0043] 25. A method of manufacturing a semiconductor integrated circuitin which a semiconductor chip is mechanically connected to a carrier onone main surface of which plural inner leads are laid via an insulatingfilm and each electrode pad of the semiconductor chip is bonded to theabove each inner lead and which is characterized in that in the abovebonding, a part of the above inner lead is bent by a bonding tool,pressed upon the above electrode pad and bonded to it.

[0044] 26. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 25 characterized in that after a part of theabove inner lead is touched onto the above semiconductor chip by theabove bonding tool, the bonding tool is horizontally moved and the innerlead is bent in the form of a letter S.

[0045] 27. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 26 characterized in that after the above bondingtool by which a part of the above inner lead is touched onto the abovesemiconductor chip is lifted, it is horizontally moved.

[0046] 28. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 27 characterized in that after the above bondingtool by which a part of the above inner lead is touched onto the abovesemiconductor chip is lifted, the bonding tool is horizontally movedacross the bonded part of the above electrode pad in the direction ofthe base of the inner lead and further, returned to the bonded part.

[0047] 29. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 25 characterized in that after a part of theabove inner lead is struck and cut by the above bonding tool, one cutpiece is bent by the bonding tool and bonded to the above electrode pad.

[0048] 30. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 20 characterized in that the end of the aboveinner lead Is touched onto the above semiconductor chip by the abovebonding tool.

[0049] 31. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 25 characterized in that after a part of theabove inner lead is moved in the direction of the above semiconductorchip by the above bonding tool, the bonding tool is horizontally movedand the inner lead is bent in the form of a letter S.

[0050] 32. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 31 characterized in that after the above bondingtool by which a part of the above inner lead is moved in the directionof the above semiconductor chip is lifted, it is horizontally movedacross the bonded part of the above electrode pad in the direction ofthe base of the inner lead and further, returned to the bonded part.

[0051] 33. A bonding machine used for a method of manufacturing asemiconductor integrated circuit in which a semiconductor chip ismechanically connected to a carrier on one main surface of which pluralinner leads are laid via an insulating film and each electrode pad ofthe semiconductor chip is bonded to the above each inner lead and whichis characterized in that in the above bonding, apart of the above innerlead is bent by a bonding tool, pressed upon the above electrode pad andbonded.

[0052] 34. A bonding machine according to Paragraph 33 characterized inthat after a part of the above inner lead is touched onto the abovesemiconductor chip by the above bonding tool, the bonding tool ishorizontally moved and the inner lead is transformed in the form of aletter S.

[0053] 35. A method of manufacturing a semiconductor integrated circuitincluding the following processes:

[0054] (1) a process for supplying a chip-lead complex tape in whichmultiple semiconductor integrated circuit chips are fixed on a carriertape provided with a wiring pattern including multiple inner leads to alead bonding machine,

[0055] (2) a process for optically observing one unit area including onechip of the above multiple chips on the above supplied chip-lead complextape in the above lead bonding machine,

[0056] (3) a process for correcting positional relationship between theabove lead in a plane parallel to a first main surface of the above chipand the above pad based upon the result of the above observation in theabove lead bonding machine by transforming an inner lead part to beconnected to a bonding pad on the first main surface of the above onechip and projected from the surface of the above carrier tape, and

[0057] (4) a process for connecting the above lead and pad by a bondingtool after the above lead is corrected in the above lead bondingmachine.

[0058] 36. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 35 characterized in that the above lead istransformed by the above bonding tool.

[0059] 37. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 36 characterized in that the bonding of the abovelead is executed for every lead by the above bonding tool.

[0060] 38. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 37 characterized in that a unit area on the abovechip-lead complex tape corresponds to one unit or plural units of achip-sized package.

[0061] 39. A method of manufacturing a semiconductor integrated circuitconsisting of the following processes:

[0062] (1) a process for supplying a chip-lead complex tape in whichmultiple semiconductor integrated circuit chips are fixed on a carriertape provided with a wiring pattern including multiple inner leads to alead bonding machine,

[0063] (2) a process for detecting relative positional relationshipamong the above lead bonding machine, the above pad and lead in the leadbonding machine by optically observing one unit area including one chipof the above multiple chips on the above supplied chip-lead complextape,

[0064] (3) a process for correcting relative positional relationshipbetween the above lead to be connected to a bonding pad on a first mainsurface of the above one chip in a plane parallel to the first mainsurface of the above chip and the above pad based upon the result of theabove detection in the above lead bonding machine, and

[0065] (4) a process for connecting the above lead and pad by a bondingtool after the above correction in the above lead bonding machine.

[0066] 40. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 39 characterized in that the bonding of the abovelead is executed for every lead by the above bonding tool.

[0067] 41. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 40 characterized in that a unit area on the abovechip-lead complex tape corresponds to one unit or plural units of achip-sized package.

[0068] 42. A method of manufacturing a semiconductor integrated circuitconsisting of the following processes:

[0069] (1) a process for supplying a chip-lead complex tape in whichmultiple semiconductor integrated circuit chips are fixed on a carriertape provided with a wiring pattern including multiple inner leads to alead bonding machine,

[0070] (2) a process for moving one unit area including one chip of theabove multiple chips on the above supplied chip-lead complex tape to aposition in which bonding is executed in the above lead bonding machine,

[0071] (3) a process for pushing down the end of an inner lead or thevicinity after being moved from on the above carrier tape moved to abonding position in the above unit area to over the corresponding pad ofa chip in the same area by a bonding tool in the above lead bondingmachine,

[0072] (4) a process for forming the above inner lead by pushing theabove pushed-down inner lead in the direction of the base of the innerlead across over the above pad area by the above bonding tool andtransforming the above inner lead in the above lead bonding machine, and

[0073] (5) a process for bonding the above lead and pad by pressing theabove formed inner lead upon the above pad by the above bonding tool.

[0074] 43. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 42 characterized in that the above process forpushing down is continued until the above bonding tool reaches thesurface of the above chip via the above inner lead

[0075] 44. A method-of manufacturing a semiconductor integrated circuitaccording to Paragraph 43 characterized in that the bonding of the abovelead is executed for every lead by the above bonding tool.

[0076] 45. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 44 characterized in that a unit area on the abovechip-lead complex tape corresponds to on unit or plural units of achip-sized package.

[0077] 46. A method of manufacturing a semiconductor integrated circuitconsisting of the following processes:

[0078] (1) a process for supplying a chip-lead complex tape in whichmultiple semiconductor integrated circuit chips are fixed on a carriertape provided with wiring including an inner lead part with the abovechip-lead complex tape wound on a loading reel,

[0079] (2) a process for carrying and supplying the above each lead andeach bonding pad of the above chip to a part for bonding using afriction roller by successively unwinding the above chip-lead complextape wound on the above loading reel, and

[0080] (3) a process for winding the above chip-lead complex tape on anunloading reel after bonding is finished.

[0081] 47. A method of manufacturing a semiconductor integrated circuitaccording to Paragraph 46 characterized in that the carriage of theabove chip-lead complex tape is controlled by optically detecting anopening provided periodically in the direction of the length of acarrier tape.

[0082] 48. A method of manufacturing a semiconductor integrated circuitconsisting of the following processes:

[0083] (1) a process for supplying a chip-lead complex tape in whichmultiple semiconductor integrated circuit chips are fixed on a carriertape provided with a wiring pattern including multiple inner leads to alead bonding machine,

[0084] (2) a process for moving one unit area including one chip of theabove multiple chips on the above supplied chip-lead complex tape to aposition for executing bonding in the above lead bonding machine,

[0085] (3) a process for pushing down the vicinity of the end of aninner lead which is set so that the end of the inner lead is located inan opening through the opening of a tape over the corresponding pad of achip in the above unit area from on the above carrier tape moved to abonding position in the same area, that is, a lead on the reverse sideto the above inner lead in a part to be cut which is formed so that itis weaker than the other part by a bonding tool in the above leadbonding machine,

[0086] (4) a process for forming the above inner lead by transformingthe inner lead cut as a result of pushing down by the above bonding toolin the above lead bonding machine, and

[0087] (5) a process for bonding the above lead and pad by pressing theabove formed inner lead upon the above pad by the above bonding tool.

[0088] 49. A method of manufacturing a semiconductor integrated circuitincluding the following processes:

[0089] (1) a process for supplying a chip-lead complex tape in whichmultiple semiconductor integrated circuit chips are fixed on a carriertape provided with a wiring pattern including multiple inner leads to alead bonding machine,

[0090] (2) a process for moving one unit area including one chip of theabove multiple chips on the above supplied chip-lead complex tape to aposition for executing bonding in the above lead bonding machine,

[0091] (3) a process for diagonally pushing down the end of an innerlead or the vicinity which is set so that the end of the inner lead islocated in an opening through the opening of a tape over thecorresponding pad of a chip in the above unit area from on the abovecarrier tape moved to a bonding position in the same area from thereverse side to the above inner lead in a part to be cut which is formedso that it is weaker than the other part to the side of the base of theabove inner lead by a bonding tool in the above lead bonding machine,

[0092] (4) a process for forming the above inner lead by transformingthe inner lead cut as a result of pushing down by the above bonding toolin the above lead bonding machine, and

[0093] (5) a process for bonding the above lead and pad by pressing theabove formed inner lead upon the above pad by the above bonding tool.

[0094] 50. A lead bonding machine characterized in that after achip-lead complex tape in which a semiconductor integrated circuit chipis fixed on a carrier tape is supplied with the above tape wound on aloading reel, carried by a friction roller and a lead is bonded to abonding pad on the above semiconductor integrated circuit chip, theabove tape is wound on an unloading reel.

[0095] 51. A lead bonding machine according to Paragraph 50characterized in that if correction is required, the bonding of theabove lead is executed after positional relationship between the abovelead and the corresponding bonding pad is corrected by transforming aninner lead part of the lead.

[0096] 52. A lead bonding machine according to Paragraph 51characterized in that the correction by transformation of the above leadis executed if necessary based upon the result of optically observingpositional relationship between a lead and a bonding pad.

[0097] 53. A lead bonding machine according to Paragraph 52characterized in that the bonding of the above lead is executed forevery lead by a bonding tool.

[0098] 54. A lead bonding machine according to Paragraph 53characterized in that the correction by transformation of the above leadis executed for every lead by the above bonding tool.

BRIEF DESCRIPTION OF THE DRAWINGS

[0099]FIG. 1 is a flowchart showing an inner lead recognition method ina bonding method equivalent to an embodiment of the present invention;

[0100] FIGS. 2(a) to (f) are explanatory drawings for explaining eachprocess;

[0101]FIG. 3 is a schematic drawing showing a bonding machine equivalentto an embodiment of the present invention;

[0102] FIGS. 4(a) to (e) show the bonding method equivalent to theembodiment of the present invention, FIG. 4(a) is an enlarged partialsectional view showing a process for cutting an inner lead, FIG. 4(b) isan enlarged partial sectional view showing a process for measuring aheight, FIG. 4(c) is an enlarged partial sectional view showing aprocess for lifting a bonding tool after the measurement of the height,FIG. 4(d) is an enlarged partial sectional view showing a process forforming the inner lead, and FIG. 4(e) is an enlarged partial sectionalview showing a bonding process;

[0103] FIGS. 5(a) and (b) show a workpiece, FIG. 5(a) is a plan omittinga part and FIG. 5(b) is a front sectional view omitting a part;

[0104] FIGS. 6(a) and (b) show a manufactured microball grid arrayintegrated circuit (μBGA-•IC), FIG. 6(a) is a plan and FIG. 6(b) is afront view a part of which is a sectional view;

[0105]FIG. 7 is a flowchart showing an inner lead recognition method ina bonding method equivalent to an embodiment of the present invention;

[0106] FIGS. 8(a) to (f) are explanatory drawings for explaining eachprocess;

[0107]FIG. 9 is a flowchart showing an inner lead recognition method ina bonding method equivalent to an embodiment of the present invention;

[0108] FIGS. 10(a) to (f) are explanatory drawings for explaining eachprocess;

[0109] FIGS. 11(a) to (e) show the bonding method equivalent to theembodiment of the present invention, FIG. 11(a) is a partial sectionalview showing a process for cutting an inner lead, FIG. 11(b) is apartial sectional view showing a process for measuring a height, FIG.11(c) is a partial sectional view showing a process for lifting abonding tool after the measurement of the height, FIG. 11(d) is apartial sectional view showing a process for forming an inner lead andFIG. 11(e) is a partial sectional view showing a bonding process;

[0110]FIG. 12 is a schematic drawing showing a bonding machineequivalent to an embodiment of the present invention;

[0111] FIGS. 13(a) and (b) show a workpiece, FIG. 13(a) is a planomitting a part and FIG. 13(b) is a front view omitting a part a part ofwhich is a sectional view;

[0112] FIGS. 14(a) and (b) show a manufactured μBGA •IC, FIG. 14(a) is aplan a part of which is a sectional view and FIG. 14(b) is a front viewa part of which is a sectional view;

[0113]FIG. 15 is a flowchart showing a method of manufacturing μBGA•ICequivalent to an embodiment of the present invention;

[0114]FIG. 16 is a front view showing a bonding machine used for theabove method;

[0115]FIG. 17 is a front view a part of which is a sectional viewshowing the main part;

[0116]FIG. 18 is a plan showing the main part;

[0117]FIG. 19 is a front view a part of which is a sectional viewshowing the main part including a block diagram;

[0118]FIG. 20 is a plan showing a workpiece and omitting a part;

[0119]FIG. 21(a) is a front view a part of which is a sectional viewshowing the workpiece and FIG. 21(b) is a side view a part of which is asectional view;

[0120] FIGS. 22(a) to (c) show a chip, FIG. 22(a) is a plan, FIG. 22(b)is a front view a part of which is a sectional view, and FIG. 22(c) isan enlarged side view a part of which is a sectional view;

[0121]FIG. 23 is a perspective view showing a method of supplying aworkpiece to a state and positioning it;

[0122] FIGS. 24(a) to (c) are explanatory drawings for explaining amethod of measuring positional relationship between an inner lead and anelectrode pad, FIG. 24(a) is a screen view showing the whole workpiece,FIG. 24(b) is a screen view showing a step for measuring a feature lead,and FIG. 24(c) is a screen view showing a step for measuring a featurepad;

[0123] FIGS. 25 are explanatory drawings for explaining each process ofthe inner lead recognition method;

[0124] FIGS. 26 are explanatory drawings for explaining each process ofthe bonding method;

[0125]FIG. 27 is a front sectional view showing manufactured μBGA•IC;

[0126]FIG. 28 is a perspective drawing showing the appearance of themanufactured μBGA•IC;

[0127]FIG. 29 shows a bonding method in which bonding by a bonding toolis executed after the height of a chip is measured and is a frontsectional view showing an initial bending process;

[0128]FIG. 30 is a front sectional view showing a touching process;

[0129]FIG. 31 is a front sectional view showing a lifting process;

[0130]FIG. 32 is a front sectional view showing a parallel movingprocess;

[0131]FIG. 33 is a front sectional view showing a thermocompressionbonding process; and

[0132] FIGS. 34 are locus views showing the variation of the locus ofthe bonding tool.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0133] Referring to the drawings, embodiments of the present inventionwill be described below.

First Embodiment

[0134]FIG. 1 is a flowchart showing an inner lead recognition method ina bonding method equivalent to an embodiment of the present invention.FIGS. 2(a) to (f) are explanatory drawings for explaining each process.FIG. 3 is a schematic drawing showing a bonding machine equivalent to anembodiment of the present invention. FIGS. 4(a) to (e) are sectionalviews showing each process of the bonding method. FIGS. 5(a) and (b)show a workpiece, FIG. 5(a) is a plan omitting a part and FIG. 5(b) is afront sectional view omitting a part. FIGS. 6(a) and (b) show amanufactured microball grid array integrated circuit (μBGA•IC), FIG.6(a) is a plan and FIG. 6(b) is a front view a part of which is asectional view.

[0135] In this embodiment, the bonding method according to the presentinvention is used in a bonding process in a method of manufacturing anintegrated circuit (IC) provided with a microball grid array (μBGA)(hereinafter called μBGA•IC), that is, a so-called chip-sized package(CSP) and is executed by a bonding machine shown in FIG. 3. A workpiece1 in the bonding process in the method of manufacturing μBGA•IC isconstituted as shown in FIG. 5. In the workpiece 1 (a chip lead complextape), a chip (a semiconductor integrated circuit chip) is mechanicallyconnected (fixed such as fastened, bonded and stuck) to a tape carrier(a wiring tape) via an insulating layer (if necessary, a conductive filmmay also be inserted between insulating layers). The tape carrier 2 as acarrier is equivalent to a tape automated bonding (TAB) tape used in amethod of manufacturing IC (TCP•IC) provided with a tape carrier package(TCP). As the tape carrier 2 is constituted so that the same pattern isrepeated in the longer direction (plural patterns may also exist in thedirection perpendicular to the longer direction), the constitution ofonly one unit is described and shown in drawings.

[0136] The tape carrier 2 is provided with the body 3 of the carriermade of resin which is an insulator such as polyimide in which the samepatterns are integrated with a tape which continues in the longerdirection and in the body 3 of the carrier, a square bump formation part4 which may also be rectangular or in the other form is arranged in arow (may also be in plural rows) in the longer direction. In the bumpformation part 4, multiple bump holes 5 are made on a square line whichmay also be a line rectangular or in the other form and each bump hole 5is provided to electrically connect a bump described later to an outerlead described later. Four window apertures 6 respectively formed in theshape of a rectangle are made and arranged in the form of a square framewhich may also be a frame rectangular or in the other form along thefour sides of the bump formation part 4.

[0137] Plural inner leads 7 are wired through each window aperture 6 inthe shorter direction on the main surface on one side of the body 3 ofthe carrier (hereinafter called the lower surface). Each outer lead 8 iscoupled to one end on the side of the bump formation part 4 of eachinner lead 7 (hereinafter called the inner end) and each inner lead 7and each outer lead 8 connected to each other are mechanically andelectrically integrated. A group of inner leads 7 and a group of outerleads 8 are formed by conductive material such as copper and gold. For amethod of forming the group of inner leads 7 and the group of outerleads 8, there are a method of patterning copper or gold foil fixed onthe body 3 of the carrier by suitable means such as welding and bondingby lithography and etching, a method of selectively plating gold on thebody 3 of the carrier by lithography and others. The part opposite tothe bump hole 5 of each outer lead 8 is exposed from the bump formationpart 4.

[0138] The inner leads 7 are respectively wired at regular intervals inparallel in the longer direction of each window aperture 6. A pair oftriangular notches 9 are formed in V shape on both sides in a part whichcrosses the window aperture 6 of each inner lead 7. That is, each innerlead 7 is constituted so that it can be readily cut on a line whichconnects both notches 9 (If a notch is formed as described above, thereis effect that a lead can be prevented from being deformed when a tapeis carried before, however, if there is no such problem, a lead where anotch is formed beforehand as shown in FIGS. 25 and 26 may also be used.If a lead where a notch is beforehand formed is used, a lead formingcharacteristic may be further satisfactory.). In each inner lead 7, apair of notches 9 are arranged in a position biased toward the reverseside (hereinafter called outside) to the bump formation part 4 extendingfrom the center to the window aperture 6. That is, the length of a part7 a (hereinafter called a short part) from both notches 9 to the outsideof the window aperture 6 in each inner lead 7 is shorter than the lengthof a part 7 b (hereinafter called a long part) from both notches 9 tothe inside of the window aperture 6 in each inner lead 7.

[0139] On the lower surface of the body 3 of the carrier, an insulatingfilm 10 made of elastomer and silicon rubber is deposited by suitablemeans such as bonding, and the group of inner leads 7 and the group ofouter leads 8 are covered by the insulating film 10. A rectangularwindow aperture 11 is made in a part opposite to each window aperture 6of the body 3 of the carrier in the insulating film 10 so as to exposethe group of inner leads 7 so that the window aperture is a littlelarger than the window aperture 6 of the body 3 of the carrier.Therefore, the tape carrier 2 is constituted by the body 3 of thecarrier, the group of inner leads 7, the group of outer leads 8 and theinsulating film 10.

[0140] As shown in FIG. 5, a chip 12 is formed in a flat square the areaof which is approximately equal to that of one unit of the tape carrier2 and desired semiconductor integrated circuits including asemiconductor device are formed on one main surface (hereinafter calledon the active area side). That is, as for the chip 12, semiconductorintegrated circuits are formed on the active area side in the state of asemiconductor wafer in a preprocess in manufacturing IC and divided inthe form of a flat square in a dicing process. The surface of the chip12 on the active area side is coated with a passivation film 13 and anelectrode pad 14 is exposed in an opening formed in the passivation film13. Plural electrode pads 14 are formed and correspond to each innerlead 7 in the tape carrier 2.

[0141] The chip 12 constituted as described above is mechanicallyconnected to the tape carrier 2 constituted as described above as shownin FIG. 5. That is, the chip 12 is arranged in the tape carrier 2 sothat each electrode pad 14 is registered-to each inner lead 7, bondedbetween the passivation film 13 and the insulating film 10 andmechanically connected. In this state, each inner lead 7 is opposite toeach electrode pad 14 in a position distant upward by the thickness ofthe insulating film 10 and a bond layer. In each inner lead 7, a pair ofnotches 9 are arranged in a position biased left from right over theelectrode pad 14 and approximately the center of the long part 7 b ofthe inner lead 7 is located right over the electrode pad 14.

[0142] A bonding machine shown in FIG. 3 is provided with a stage 21 andthe stage 21 is constituted so that a workpiece I constituted asdescribed above is horizontally held. An XY table 22 is installed nextto the stage 21 and constituted so that a bonding head 23 mounted on theXY table is moved in x- and y-directions. One end of a bonding arm 24 tothe end of which a bonding tool 25 is attached is supported by thebonding head 23 and the bonding head 23 is constituted so that thebonding tool 25 is lifted or lowered by operating the bonding arm 24. Aposition detecting sensor 26 is attached to the bonding arm 24 andconnected to a main controller described later. A controller 27(hereinafter called an operating controller) for controlling the aboveoperation is connected to the XY table 22 and the bonding head 23 and acontroller 28 (hereinafter called a main controller) for instructingoperation is connected to the operating controller 27. A display 29 isconnected to the main controller 28.

[0143] An industrial television camera 31 (hereinafter called a camera)as an image capturing device for constituting an inner lead recognitionsystem 30 is attached to the bonding head 23 via a stand 36 and thecamera 31 photographs a workpiece 1 on the stage 21. An inner leadrecognizing measuring line setting section 32 (hereinafter called asetting section) for setting a measuring line for recognizing an innerlead is connected to the camera 31 and a luminance measuring section 33is connected to the setting section 32. A forming section 34 for formingan added luminance distribution waveform is connected to the luminancemeasuring section 33 and a judging section 35 for judging the centerline of an inner lead is connected to the forming section 34. Thejudging section 35 is connected to the main controller 28 so that theresult of judgment is sent to the main controller 28.

[0144] Next, referring to FIGS. 1 to 3, an inner lead recognition methodin a bonding method equivalent to an embodiment of the present inventionby the bonding machine constituted as described above will be described.

[0145] The main controller 28 drives the XY table 22 and moves thecamera 31 in a position for photographing an inner lead 7 to be bondedin a workpiece 1 loaded on the stage 21. The camera 31 executes an imagecapturing process 41 shown in FIG. 1 and photographs an inner lead 7 tobe bonded. An image 51 shown in FIG. 2(a) photographed by the camera 31is displayed on the display 29 and input to the setting section 32.

[0146] The setting section 32 executes an inner lead recognizingmeasuring line setting process 42 shown in FIG. 1, sets one imagescanning line including the electrode pad 14 of image scanning linesrespectively perpendicular to the inner lead 7 in the image 51 shown inFIG. 2(a) to an inner lead recognizing measuring line opposite to theelectrode pad 52 (hereinafter called a central measuring line) andrespectively sets two image scanning lines respectively adjacent to theelectrode pad 14 to an inner lead recognizing measuring line outside theelectrode pad 53 and 54 (hereinafter called an inner end measuring lineand an outer end measuring line).

[0147] The luminance measuring section 33 executes a luminance measuringprocess 43 shown in FIG. 1, measures luminance at each point on eachscanning line every the central measuring line 52, the inner endmeasuring line 53 and the outer end measuring line 54 and forms acentral measuring line luminance waveform 52 a, an inner end measuringline luminance waveform 53 a and an outer end measuring line luminancewaveform 54 a as shown in FIGS. 2(b), (c), and (d). These centralmeasuring line luminance waveform 52 a, inner end measuring lineluminance waveform 53 a and outer end measuring line luminance waveform54 a are input to the forming section 34.

[0148] The forming section 34 executes a forming process 44 shown inFIG. 1 and forms an added luminance distribution waveform 55 shown inFIG. 2(e) by relating each point in the central measuring line luminancewaveform 52 a, the inner end measuring line luminance waveform 53 a andthe outer end measuring line luminance waveform 54 a shown in FIGS.2(b), (c), and (d), that is, by equalizing each time series andoverlapping the respective waveforms. That is, luminance in the centralmeasuring line luminance waveform 52 a, the inner end measuring lineluminance waveform 53 a and the outer end measuring line luminancewaveform 54 a is added every point and the added luminance distributionwaveform 55 is formed. The added luminance distribution waveform 55 isinput to the judging section 35.

[0149] The judging section 35 executes a judging process shown in FIG. 1and first sets a threshold value 56 to the added luminance distributionwaveform 55 as shown in FIG. 2(f). Next, the center of gravity in anarea 57 equal to or larger than the threshold value 56 in the addedluminance distribution waveform 55 is calculated and a position oppositeto the center of gravity 58 is judged to be the position 59 of thecenter line of an inner lead 7 to be bonded. That is, the position ofthe inner lead 7 to be bonded is precisely recognized.

[0150] The inner lead 7 is precisely bonded to the electrode pad 14 byaligning the center line of the bonding tool 25 of the bonding machine20 with the position 59 of the center line of the inner lead 7 acquiredas described above by the operation of the XY table 22 under the controlof the operating controller 27 according to the instruction of the maincontroller 28.

[0151] Next, referring to FIG. 4, a bonding method equivalent to theembodiment of the present invention by the bonding machine constitutedas described above will be described.

[0152] When the bonding tool 25 pushes down a part near to the notch 9in the long part 7 b of the inner lead 7 as shown in FIG. 4(a), theinner lead 7 is cut in a line connecting both notches 9.

[0153] When the bonding tool 25 is further lowered as shown in FIG.4(b), the cut piece in the long part 7 b of the inner lead 7 is pusheddown and reaches the upper surface of the chip 12.

[0154] It is judged by the main controller 28 by analyzing positionaldata from the position detecting sensor 26 attached to the bonding arm24 whether the bonding tool 25 is touched to the upper surface of thechip 12 via the inner lead 7 or not. If it is judged that the bondingtool 25 does not reach the upper surface of the chip 12, the maincontroller 28 operates an alarm system such as a buzzer and instructsthe display 29 to display the contents of the alarm. Next, the bondingtool 25 is gradually lowered and touched to the upper surface of thechip 12 via the inner lead 7 by the manual operation of a keyboard by anoperator or automatic instruction control by the main controller 28.

[0155] If it is judged that the bonding tool 25 reaches the uppersurface of the chip 12 via the inner lead 7, the main controller 28reads positional data from the position detecting sensor 26 when thebonding tool reaches and measures the height of a point where thebonding tool reaches on the upper surface of the chip 12.

[0156] The main controller 28 which finishes measuring the height of thepoint where the bonding tool 25 reaches lifts the bonding tool 25 by apredetermined height H as shown in FIG. 4(c). The optimum value of thepredetermined height H every bonding condition is acquired by anempirical method such as an experiment, simulation by a computer andpast proven data and stored in the main controller 28 via a keyboardbeforehand. The main controller 28 instructs a predetermined height H tothe operating controller 27. The operating controller 27 lifts thebonding tool 25 by the predetermined height H by controlling the bondinghead 23 and oscillating the bonding arm 24.

[0157] When the bonding tool 25 is lifted by the predetermined height H,the cut piece in the long part 7 b of the inner lead 7 is a littlelifted by the spring back of the inner lead 7 from the upper surface ofthe chip 12 as shown in FIG. 4(c). In a state in which the cut piece inthe long part 7 b of the inner lead 7 is lifted from the chip 12, thebonding tool 25 lifted by the predetermined height H is distant from theupper surface of the cut piece in the long part 7 b of the inner lead 7.

[0158] Next, as shown in FIG. 4(d), the bonding tool 25 is moved inparallel as far as over the electrode pad 14 in the direction of thebump formation part 4 with the bonding tool maintained at the height asit is. As the cut piece in the long part 7 b of the inner lead 7 isshifted in the direction of the bump formation part 4 by the bondingtool 25 and is pushed diagonally downward as the bonding tool is movedin parallel, the cut piece is in a predetermined looped form and thelower surface of the end is touched to the upper surface of theelectrode pad 14.

[0159] Next, as shown in FIG. 4(e), the bonding tool 25 is lowered andpushes the cut piece in the long part 7 b of the inner lead 7 down. Theend on the side of the cut end of the cut piece in the long part 7 b ofthe inner lead 7 is pressed on the electrode pad 14 with the end forminga predetermined looped form by the above pushing down. The bonding tool25 presses the end on the side of the cut end of the cut piece in thelong part 7 b of the inner lead 7 on the electrode pad 14 and bonds themby thermocompression by applying heat and ultrasonic energy. That is,the inner lead 7 is bonded to the electrode pad 14 by the bonding tool25.

[0160] Afterward, the chip 12 is electrically connected to the tapecarrier 2 by repeating the inner lead recognition method described aboveand the bonding method every inner lead 7. Before the inner lead 7 isbonded to the electrode pad 14 of the chip 12 by the bonding tool 25 inbonding every inner lead 7, the position 59 of the center line of theinner lead 7 is recognized, a height from the electrode pad 14 in thechip 12 to the bonding tool 25 is measured without omission and bondingby the bonding tool 25 is executed under an optimum conditioncorresponding to the recognized position 59 of the center line and themeasured height.

[0161] Therefore, for example, even if an error in an interval betweenthe bonding tool and the inner lead 7 bonded successively by the bondingtool 25 and between the inner lead and the electrode pad 14 occursbecause the chip 12 mechanically connected via the insulating film 10under the bump formation part 4 is tilted, the looped form of each innerlead 7 after bonding is suitably formed because bonding by the bondingtool 25 is executed under an optimum condition corresponding to theabove error every inner lead 7.

[0162] When the above bonding of all inner leads 7 is finished, thegroup of inner leads 7 is sealed by a resin sealed part 15 by pottinginsulating material such as elastomer and silicon rubber inside eachwindow aperture 6 of the tape carrier 2 as shown in FIG. 6.

[0163] Next, a bump 16 protruded from the upper surface of the bumpformation part 4 is formed on the tape carrier 2 as shown in FIG. 6 bysoldering a solder ball in a part exposed at the bottom of the bump hole5 of each outer lead 8 in the tape carrier 2. As described above,μBGA•IC 17 shown in FIG. 6 is manufactured.

[0164] A chip-sized package manufactured as described above is suppliedto a mounted device in a state in which it is attached to a tape carrieror divided into units if necessary and electrically or mechanicallyconnected to another wiring board via the bump electrode 16 and otherconnecting structure.

[0165] According to the above embodiment, the following effect isobtained:

[0166] (1) As the bonding tool 25 can be precisely aligned with theinner lead 7 by successively recognizing the position 59 of the centerline of the inner lead 7 before the inner lead 7 is bonded to theelectrode pad 14 of the chip 12 by the bonding tool 25 when the innerlead 7 is bonded to the electrode pad 14 by the bonding tool 25 and eachinner lead 7 can be suitably bonded to each electrode pad 14, thequality, the reliability and the yield of μBGA•IC 17 can be enhanced.

[0167] (2) As the area 57 equal to or larger than the threshold value 56in the added luminance distribution waveform 55 can be formed by formingthe added luminance distribution waveform 55 by adding each luminanceevery same point in the central measuring line luminance waveform 52 a,the inner end measuring line luminance waveform 53 a, and the outer endmeasuring line luminance waveform 54 a and setting the threshold value56 to the added luminance distribution waveform 55, the position 59 ofthe center line of the inner lead 7 can be precisely judged regardlessof the existence of the electrode pad 14 to which the inner lead 7 is tobe bonded and the position of the inner lead 7 to be bonded can beprecisely recognized.

[0168]FIG. 7 is a flowchart showing an inner lead recognition method inthe bonding method equivalent to the embodiment of the presentinvention. FIGS. 8 are explanatory drawings for explaining each processshown in FIG. 7.

[0169] This embodiment is different from the above first embodiment inthat an image corresponding to an inner lead and an electrode pad isfetched from a horizontal direction to recognize the center line in thethickness of the inner lead. Referring to FIGS. 7 and 8, the inner leadrecognition method in the bonding method equivalent to this embodimentwill be described below.

[0170] In this embodiment, a camera fetches an image 71 shown in FIG.8(a) corresponding to an inner lead 7 and an electrode pad 14 with thecamera turned sideways and in the state, an image capturing process 61shown in FIG. 7 is executed. The image 71 photographed by the cameraturned sideways and shown in FIG. 8(a) is displayed on a display andinput to a setting section 32.

[0171] The setting section 32 executes an inner lead recognizingmeasuring line setting process 62 shown in FIG. 7, sets one imagescanning line including the electrode pad 14 of vertical scanning lines(a virtual scanning line in the case of a television receiver, however,it can be readily set by image processing) respectively perpendicular tothe inner lead 7 in the image 71 to an inner lead recognizing measuringline corresponding to an electrode pad 72 (hereinafter called centralmeasuring line) as shown in FIG. 8(a), and respectively sets imagescanning lines on both sides of the electrode pad 14 to inner leadrecognizing measuring lines outside the electrode pad 73 and 74(hereinafter called an inner end measuring line and an outer endmeasuring line).

[0172] A luminance measuring section 33 executes a luminance measuringprocess 63 shown in FIG. 1, measures luminance at each point on eachscanning line every the central measuring line 72, the inner endmeasuring line 73, and the outer end measuring line 74 and forms acentral measuring line luminance waveform 72 a, an inner end measuringline luminance waveform 73 a and an outer end measuring line luminancewaveform 74 a respectively shown in FIGS. 8(b), (c), and (d). Thesecentral measuring line luminance waveform 72 a, inner end measuring lineluminance waveform 73 a and outer end measuring line luminance waveform74 a are input to a forming section 34.

[0173] The forming section 34 executes a formation process 44 shown inFIG. 1 and forms an added luminance distribution waveform 75 shown inFIG. 8(e) by aligning each point on each scanning line in the centralmeasuring line luminance waveform 72 a, the inner end measuring lineluminance waveform 73 a and the outer end measuring line luminancewaveform 74 a shown in FIGS. 8(b), (c), and (d), that is, by equalizingtime series and overlapping each waveform. That is, luminance in thecentral measuring line luminance waveform 72 a, the inner end measuringline luminance waveform 73 a and the outer end measuring line luminancewaveform 74 a is added every each point and the added luminancedistribution waveform 75 is formed. The added luminance distributionwaveform 75 is input to a judging section 35.

[0174] The judging section 35 executes a judging process 65 shown inFIG. 1 and first, sets a threshold value 76 of the added luminancedistribution waveform 75 as shown in FIG. 8(f) Next, the center ofgravity 78 in an area 77 equal to or larger than the threshold value 76in the added luminance distribution waveform 75 is calculated and aposition opposite to the center of gravity 78 is judged to be theposition 79 of the center line in the direction of the thickness of theinner lead 7. That is, the above shows that the position in height ofthe inner lead 7 to be bonded is precisely recognized.

[0175] The inner lead 7 is precisely bonded to the electrode pad 14 byutilizing the height of a bonding tool 25 of a bonding machine 20 in theposition acquired as described above of the center line in the directionof the thickness of the inner lead 7, that is, the position 79 in heightfor the operation of a bonding head 23 under the control of an operatingcontroller 27 according to the instruction of a main controller 28.

[0176]FIG. 9 is a flowchart showing an inner lead recognition method inthe bonding method equivalent to the embodiment of the presentinvention. FIGS. 10 are explanatory drawings for explaining eachprocess.

[0177] This embodiment is different from the above first embodiment inthat a threshold value exceeding added luminance distribution waveform55A shown in FIG. 10(e) is formed by setting a threshold value 56A everya central measuring line luminance waveform 52 a, an inner end measuringline luminance waveform 53 a, and an outer end measuring line luminancewaveform 54 a as shown in FIGS. 10(b), (c), and (d), equalizing the timeseries of the above waveforms and overlapping the above waveforms afteracquiring each area 57A exceeding the threshold value 56A, the center ofgravity 58 in the area 57A in the threshold value exceeding addedluminance distribution waveform 55A is calculated as shown in FIG. 10(f)and a position opposite to the center of gravity 58 is judged to be theposition 59 of the center line of the inner lead 7 to be bonded.

[0178] Also in the above embodiment, similarly, after each areaexceeding the threshold value is acquired for each central measuringline luminance waveform 72 a, each inner end measuring line luminancewaveform 73 a, and each outer end measuring line luminance waveform 74a, a threshold value exceeding added luminance distribution waveform isformed, the center of gravity is calculated and a position opposite tothe center of gravity may be judged to be the position of the centerline in the direction of the thickness of the inner lead 7.

[0179] The present invention made by the inventor is describedconcretely above based upon the embodiments, however, the presentinvention is not limited to the above embodiments and it need scarcelybe said that variations may be allowed in a range in which the outlineis unchanged.

[0180] For example, only one inner end measuring line and only one outerend measuring line are set, however, it is desirable that as many innerend measuring lines and outer end measuring lines as possible are set ina range in which the number of pixels of a camera allows because themore above measuring lines are set, the smaller the effect of anelectrode pad is relatively.

[0181] For an image capturing device, not only an industrial televisioncamera is used but an area sensor, a line sensor such as a chargecoupled device (CCD) and others may also be used. In that case, an imagecapturing device may also be constituted so that an image is scanned bymoving the image capturing device or by moving a stage.

[0182] For a bonding method for electrically connecting an inner lead toan electrode pad, not only an ultrasonic thermocompression bondingmethod is used but a pressure welding method, an eutectic method andothers may also be used.

[0183] A bonding machine for executing bonding is not limited to abonding machine constituted for only single point bonding and anexisting wire bonding machine may also be utilized.

[0184] The body of a carrier which is a carrier for the group of innerleads and the group of outer leads is not only constituted by a tape butit may also be constituted by a rigid substrate formed by an insulatingresin film, ceramics or insulating material such as resin.

[0185] A case in which the present invention made by the inventor isapplied to the method of manufacturing μBGA•IC is mainly describedabove, however, the present invention is not limited to it and can beapplied to the whole bonding technology used for a method ofmanufacturing CSP•IC and others.

Second Embodiment

[0186] FIGS. 11 are partial sectional views showing each process in abonding method equivalent to an embodiment of the present invention.FIG. 12 is a schematic drawing showing a bonding machine equivalent tothe embodiment of the present invention. FIGS. 13 show a workpiece, FIG.13(a) is a partially omitted plan and FIG. 13(b) is a partially omittedfront view showing a partial section. FIGS. 14 show manufacturedμBGA•IC, FIG. 14(a) is a plan showing a partial section and FIG. 14(b)is a front view showing a partial section.

[0187] In this embodiment, the bonding method according to the presentinvention is used for a bonding process in a method of manufacturing ICprovided with μBGA (hereinafter called μBGA•IC) and executed by abonding machine shown in FIG. 12. A workpiece 1 in the bonding processin the method of manufacturing μBGA•IC is constituted as shown in FIG.13. In the workpiece 1, a chip is mechanically connected to a tapecarrier via an insulating layer. The tape carrier 2 as a carrier isequivalent to a tape automated bonding (TAB) tape used in a method ofmanufacturing IC provided with a tape carrier package (TCP•IC). As thetape carrier 2 is constituted so that the same pattern is repeated inthe longer direction, only one unit is described and shown.

[0188] The tape carrier 2 is provided with the body 3 of the carriermade of resin which is an insulator such as polyimide in which the samepatterns are integrated with a tape which continues in the longerdirection and in the body 3 of the carrier, square bump formation parts4 are arranged in a row in the longer direction. In the bump formationpart 4, many bump holes 5 are made, arranged on a square loop line andeach bump hole 5 is constituted so that a bump described later iselectrically connected to an inner lead described later. Four windowapertures 6 formed in the form of a rectangle are made and arranged inthe form of a square frame near to the four sides of the bump formationpart 4.

[0189] Plural inner leads 7 are wired on one main surface (hereinaftercalled the lower surface) of the body 3 of the carrier so that theycross each window aperture 6 in the shorter direction. Each outer lead 8is coupled to one end on the side of the bump formation part 4 of eachinner lead 7 (hereinafter called the inner end) and the coupled innerlead 7 and outer lead 8 are mechanically and electrically integrated. Agroup of inner leads 7 and a group of outer leads 8 are formed byconductive material such as copper and gold. For a method of forming thegroup of inner leads 7 and the group of outer lead 8, there are a methodof patterning copper or gold foil fixed to the body 3 of the carrier bysuitable means such as welding and bonding by lithography and etching, amethod of selectively plating the body 3 of the carrier with gold bylithography and others. A part opposite to the bump hole 5 of each outerlead 8 is exposed from the bump formation part 4.

[0190] Inner leads 7 are wired in parallel at a fixed interval in thelonger direction of each window aperture 6. A pair of triangular notches9 are formed on both sides of a part which crosses the window aperture 6of each inner lead 7. That is, each inner lead 7 is constituted so thatit can be readily cut in a line connecting both notches 9. In each innerlead 7, a pair of notches 9 are formed in a position biased on thereverse side (hereinafter called outside) to the bump formation part 4from the center in the window aperture 6. That is, the length of a part7 a (hereinafter called short part) in which both notches 9 in eachinner lead 7 are biased outside the window aperture 6 is shorter thanthat of a part 7 b (hereinafter called long part) in which both notches9 in each inner lead 7 are distant from the inner side of the windowaperture 6.

[0191] An insulating film 10 made of elastomer and silicon rubber isdeposited on the lower surface of the body 3 of the carrier by suitablemeans such as bonding, and the group of inner leads 7 and the group ofouter leads 8 are covered with the insulating film 10. A rectangularwindow aperture 11 is made in a part opposite to each window aperture 6of the body 3 of the carrier in the insulating film 10 so as to exposethe group of inner leads 7 so that the window aperture 11 is a littlelarger than the window aperture 6 of the body 3 of the carrier.Therefore, the tape carrier 2 is constituted by the body 3 of thecarrier, the group of inner leads 7, the group of outer leads 8 and theinsulating film 10.

[0192] As shown in FIG. 13, a chip 12 is formed in the form of a flatsquare approximately equal to one unit of the tape carrier 2 in area andon the side of one main surface (hereinafter called active area side),desired semiconductor integrated circuits including a semiconductordevice are formed. That is, in the preprocess of manufacturing IC,semiconductor integrated circuits are formed on the active area side ofthe chip 12 in a state of a semiconductor wafer and the chip 12 isdivided in a flat square in a dicing process. The surface of the chip 12on the active area side is coated with a passivation film 13 and anelectrode pad 14 is exposed outside in an opening formed in thepassivation film 13. Plural electrode pad 14 are formed and theyrespectively correspond to each inner lead 7 in the tape carrier 2.

[0193] The chip 12 constituted as described above is mechanicallyconnected to the tape carrier 2 constituted as described above as shownin FIG. 13. That is, the chip 12 is arranged so that each electrode pad14 corresponds to each inner lead 7 in the tape carrier 2, thepassivation film 13 and the insulating film 10 are bonded and the chipis mechanically connected to the tape carrier. In this state, each innerlead 7 is opposite to each electrode pad 14 in a position distant upwardby the thickness of the insulating film 10 and a bonding layer. In eachinner lead 7, a pair of notches 9 are arranged in a position biased leftfrom right over the electrode pad 14 and approximately the center of thelong part 7 b of each inner lead 7 is located over each electrode pad14.

[0194] A bonding machine 20 shown in FIG. 12 is provided with a stage 21and the stage 21 is constituted so that a workpiece 1 constituted asdescribed above is horizontally held. An XY table 22 is installed nextto the stage 21 and the XY table 22 is constituted so that a bondinghead 23 mounted on it is moved in x- and y-directions. One end of abonding arm 24 to the other end of which a bonding tool 25 is attachedis supported by the bonding head 23 and the bonding head 23 isconstituted so that the bonding tool 25 is lifted or lowered byoperating the bonding arm 24. A position detecting sensor 26 is attachedto the bonding arm 24, detects the position of the bonding arm 24 andsends the detected position to a main controller described later.

[0195] A controller 27 for controlling the operation of the XY table andthe bonding head (hereinafter called operating controller) is connectedto the XY table 22 and the bonding head 23 and a controller 28 forinstructing operation (hereinafter called main controller) is connectedto the operating controller 27. A display 29, a keyboard 29A and abuzzer 29B as an alarm are connected to the main controller 28.

[0196] Next, referring to FIG. 11, a bonding method equivalent to anembodiment of the present invention by the bonding machine constitutedas described above will be described.

[0197] As shown in FIG. 11(a), when the bonding tool 25 pushes down apart near to the notches 9 in the long part 7 b of the inner lead 7, theinner lead 7 is cut in a line connecting both notches 9. In this case,when the bonding tool 25 is lowered so that it approaches the electrodepad diagonally from a position distant from the above pad 14, cuts thepart of the notches of the lead and is further diagonally lowered, thebonding tool can securely hold the lead also after cutting. If thebonding tool pushes down apart 7 a of the lead on the reverse side ofthe notches when the bonding tool is diagonally lowered similarly, theabsorption of stress by the looseness of the lead is small and the leadmay be smoothly cut.

[0198] As shown in FIG. 11(b), the cut piece in the long part 7 b of theinner lead 7 is pushed down by further lowering the bonding tool 25 andtouched to the upper surface of the chip 12.

[0199] It is judged in the main controller 28 by analyzing positionaldata from the position detecting sensor 26 whether the bonding tool 25reaches the upper surface of the chip 12 via the inner lead 7 or not. Ifthe bonding tool 25 is judged to-be not touched to the upper surface ofthe chip 12, the main controller 28 operates the buzzer 29B andinstructs the display 29 to display the contents of the alarm. Next, thebonding tool 25 is gradually lowered by manual operation by an operatorvia the keyboard 29A or automatic instruction control by the maincontroller 28 and touched to the upper surface of the chip 12 via theinner lead 7.

[0200] If the bonding tool 25 is judged to be touched to the uppersurface of the chip 12 via the inner lead 7, the main controller 28reads positional data from the position detecting sensor 26 when thebonding tool reaches the upper surface of the chip and measures a heightin which the bonding tool reaches the upper surface of the chip 12 viathe inner lead.

[0201] The main controller 28 which finishes the measurement of theheight of the bonding tool 25 lifts the bonding tool 25 by apredetermined height H as shown in FIG. 11(c). An optimum value of thepredetermined height H corresponding to each bonding condition isacquired by an empirical method such as an experiment, simulation by acomputer and past proven data and stored in the main controller 28 viathe keyboard 29A beforehand. The main controller 28 instructs apredetermined height H to the operating controller 27. The operatingcontroller 27 lifts the bonding tool 25 by the predetermined height H bycontrolling the bonding head 23 and oscillating -the bonding arm 24.

[0202] When the bonding tool 25 is lifted by the predetermined height H,the cut piece in the long part 7 b of the inner lead 7 is a littlelifted by the spring back of the inner lead 7 from the upper surface ofthe chip 12 as shown in FIG. 11(c). In a state in which the cut piece inthe long part 7 b of the inner lead 7 is lifted from the chip 12, thebonding tool 25 lifted by the predetermined height H is distant from theupper surface of the cut piece in the long part 7 b of the inner lead 7.

[0203] Next, as shown in FIG. 11(d), the bonding tool 25 is moved inparallel as far as over the electrode pad 14 in the direction of thebump formation part 4 with the bonding tool maintained at the height asit is. As the cut piece in the long part 7 b of the inner lead 7 isshifted in the direction of the bump formation part 4 by the bondingtool 25 and is pushed diagonally downward as the bonding tool is movedin parallel, the cut piece is in a predetermined looped form and thelower surface of the end is touched to the upper surface of theelectrode pad 14.

[0204] Next, as shown in FIG. 11(e), the bonding tool 25 is lowered andpushes the cut piece in the long part 7 b of the inner lead 7 down. Theend on the side of the cut end of the cut piece in the long part 7 b ofthe inner lead 7 is pressed on the electrode pad 14 with the end forminga predetermined looped form by the above pushing down. The bonding tool25 presses the end on the side of the cut end of the cut piece in thelong part 7 b of the inner lead 7 on the electrode pad 14 and bonds themby thermocompression by applying heat and ultrasonic energy. That is,the inner lead 7 is bonded to the electrode pad 14 by the bonding tool25.

[0205] Afterward, the chip 12 is electrically connected to the tapecarrier 2 by repeating the above bonding operation every inner lead 7.Before the inner lead 7 is bonded to the electrode pad 14 of the chip 12by the bonding tool 25 in bonding every inner lead 7, a height from theelectrode pad 14 in the chip 12 to the bonding tool 25 is measuredwithout omission and bonding by the bonding tool 25 is executed under anoptimum condition corresponding to the measured height. Therefore, forexample, even if an error in an interval between the inner lead 7 bondedsuccessively by the bonding tool 25 and the electrode pad 14 occursbecause the chip 12 mechanically connected via the insulating film 10under the bump formation part 4 is tilted, the looped form of each innerlead 7 after bonding is suitably formed because bonding by the bondingtool 25 is executed under an optimum condition corresponding to theabove error every inner lead 7.

[0206] When the above bonding of all inner leads 7 is finished, thegroup of inner leads 7 is sealed by a resin sealed part 15 by pottinginsulating material such as elastomer and silicon rubber inside eachwindow aperture 6 of the tape carrier 2 as shown in FIG. 14.

[0207] Next, a bump 16 protruded from the upper surface of the bumpformation part 4 is formed on the tape carrier 2 as shown in FIG. 14 bysoldering a solder ball in a part exposed at the bottom of the bump hole5 of each outer lead 8 in the tape carrier 2. As described above,μBGA•IC 17 shown in FIG. 14 is manufactured.

[0208] According to the above embodiment, the following effect isobtained:

[0209] (1) As each inner lead 7 can be bonded to each electrode pad 14with each inner lead in a suitable looped form by successively measuringa height from the electrode pad 14 in the chip 12 to the bonding tool 25and executing bonding by the bonding tool 25 under an optimum conditioncorresponding to each measured height before the inner lead 7 is bondedto the electrode pad 14 in the chip 12 by the bonding tool 25 in bondingthe inner lead 7 to the electrode pad 14 by the bonding tool 25, thequality, the reliability, and the yield of μBGA•IC 17 can be enhanced.

[0210] (2) For example, as bonding by the bonding tool 25 is executedunder an optimum condition corresponding to the following error everyinner lead 7 even if an error in an interval between the inner lead 7successively bonded by the bonding tool 25 and the electrode pad 14occurs because the chip 12 mechanically connected under the bumpformation part 4 via the insulating film 10 is tilted, the looped formof each inner lead 7 after bonding can be suitably formed.

[0211] (3) As bonding operation can be completed on the same stage bycontinuously executing the measurement of a height and bonding after themeasurement by a series of operation of the same bonding tool 25, timerequired for bonding operation can be reduced and the structure of thebonding machine can be simplified.

[0212] The present invention made by the inventor is described aboveconcretely based upon the above embodiments, however, the presentinvention is not limited to the above embodiments and it goes withoutsaying that variations may be allowed in a range in which the outline isunchanged.

[0213] For example, a height is not always measured every inner lead anda height may also be measured by touching a bonding tool in at leastthree places on the upper surface which is a plain face including thegroup of electrode pads of a chip and acquiring the degree ofparallelism.

[0214] A height is measured not only by touching a bonding tool to theupper surface which is a plain face including the group of electrodepads of a chip but it may also be measured by using a non-contact typesensor such as laser beam distance measuring equipment. Measurement by anon-contact type sensor may also be executed online and offline.

[0215] A bonding method of electrically connecting each inner lead toeach electrode pad is not limited to an ultrasonic thermocompressionbonding method, and a pressure welding method, an eutectic method, andthe like may also be used.

[0216] A bonding machine for executing bonding is not limited to abonding machine constituted for only single point bonding and anexisting wire bonding machine may also be utilized.

[0217] The body of a carrier which is a carrier for the group of innerleads and the group of outer leads is constituted not only by a tape butit may also be constituted by a rigid substrate formed by an insulatingresin film, ceramics or insulating material such as resin.

[0218] A case in which the present invention made by the inventor isapplied to the method of manufacturing μBGA•IC is mainly describedabove, however, the present invention is not limited to it and can beapplied to the whole bonding technology used for a method ofmanufacturing CSP•IC and the like.

Third Embodiment

[0219]FIG. 15 is a flowchart showing a method of manufacturing μBGA•ICequivalent to an embodiment of the present invention. FIG. 16 is a frontview showing a bonding machine used for the above method. FIG. 17 is apartial sectional front view showing the main part. FIG. 18 is a planshowing the above main part. FIG. 19 is a partial sectional front viewincluding the block diagram of the above main part. FIG. 20 is a planomitting a part showing a workpiece. FIG. 21(a) is a partial sectionalfront view showing the workpiece and FIG. 21(b) is a partial sectionalside view showing the workpiece. FIGS. 22(a) to (c) show a chip, FIG.22(a) is a plan, FIG. 22 (b) is a partial sectional front view, and FIG.22(c) is an enlarged partial sectional side view. FIG. 23 is aperspective view showing the supply of the workpiece to a stage and apositioning method. FIGS. 24(a) to (c) are explanatory drawings forexplaining a method of measuring positional relationship between eachinner lead and each electrode pad, FIG. 24(a) shows a screen displayingthe whole workpiece, FIG. 24(b) shows a screen displaying a step formeasuring a feature lead, and FIG. 24(c) shows a screen displaying astep for measuring a feature pad. FIGS. 25(a) to (f) are explanatorydrawings for explaining each process in an inner lead recognitionmethod. FIGS. 26(a) to (c) are explanatory drawings for explaining eachprocess in a bonding method.

[0220] In this embodiment, a method of manufacturing a semiconductorintegrated circuit according to the present invention is constituted asa method of manufacturing IC provided with μBGA (hereinafter calledμBGA•IC) and a bonding process which is a main process in the method ofmanufacturing μBGA•IC is executed by a bonding machine shown in FIGS. 16to 19.

[0221] As shown in FIG. 15, in the method of manufacturing μBGA•IC, aworkpiece shown in FIGS. 20 and 21 is prepared in a workpiece preparingprocess and supplied to a bonding process in which the bonding method isexecuted. That is, the workpiece 1 supplied to the bonding process isconstituted as shown in FIGS. 20 and 21 In the workpiece 1, a chip ismechanically connected to a tape carrier via an insulating layer. Thetape carrier 2 as a carrier is equivalent to a tape automated bonding(TAB) tape used in a method of manufacturing IC provided with a tapecarrier package (TCP•IC). As the tape carrier 2 is constituted so thatthe same pattern is repeated in the longer direction, only one unit isdescribed and shown.

[0222] The tape carrier 2 is provided with the body 3 of the carriermade of resin which is an insulator such as polyimide in which the samepatterns are integrated with a tape which continues in the longerdirection and in the body 3 of the carrier, bump formation parts 4 arearranged in a row in the longer direction. In the bump formation part 4,many bump holes 5 are made, arranged on four parallel lines and eachbump hole 5 is constituted so that a bump described later iselectrically connected to an outer lead described later. A windowaperture 6 formed in the form of a rectangle are made in parallel witheach row of the bump holes 5 on the center line of the bump formationpart 4. Four long holes 6A for assisting cutting are made in theperiphery of the bump formation part 4 in the form of a rectangularframe.

[0223] Plural inner leads 7 are wired on one main surface (hereinaftercalled the lower surface) of the body 3 of the carrier so that theplural inner leads cross each window aperture 6 in the shorterdirection. Each outer lead 8 is coupled to one end on the side of thebump formation part 4 of each inner lead 7 (hereinafter called the outerend) and the coupled inner lead 7 and outer lead 8 are mechanically andelectrically integrated. A part opposite to the bump hole 5 of eachouter lead 8 is exposed from the bump formation part 4 and the outer endof each outer lead 8 is extended to the outside of the long hole 6A. Thegroup of inner leads 7 and the group of outer leads 8 are formed byconductive material such as copper and gold. For a method of forming thegroup of inner leads 7 and the group of outer lead 8, there are a methodof patterning copper or gold foil fixed to the body 3 of the carrier bysuitable means such as welding and bonding by lithography and etching, amethod of selectively plating the body 3 of the carrier with gold bylithography and others.

[0224] Inner leads 7 are wired in parallel at a fixed interval in thelonger direction of each window aperture 6. A part protruded into thewindow aperture 6 of each inner lead 7 is cut in a position in which thepart crosses the center line of the window aperture 6. That is, thelength of the part protruded into the window aperture 6 of each innerlead 7 is set so that the above length is shorter than the width of thewindow aperture 6 and longer than a half of the width.

[0225] Multiple sprocket holes 3A (hereinafter called holes) as aregular part arranged regularly are made and arranged on both sides ofthe body 3 of the carrier at an equal interval in longer direction andeach hole 3A is formed in the form of a square. A pair of feature leaddisplay holes 3B (hereinafter called display holes) for displaying eachlead 9A as a characteristic part (hereinafter called feature lead) arerespectively made on both sides of the group of outer leads 8 in thebody 3 of the carrier in a diagonal position and each display hole 3B isformed in the form of a square. The feature lead 9A is respectivelyformed on the lower surface of the body 3 of the carrier of each displayhole 3B, each feature lead 9A is formed in the form of approximately aletter h to distinguish an inner lead 7 and an outer lead 8 and arrangedsideways.

[0226] An insulating film 10 made of elastomer and silicon rubber isdeposited on the lower surface of the body 3 of the carrier by suitablemeans such as bonding, and the group of inner leads 7 and the group ofouter leads 8 are covered with the insulating film 10. A rectangularwindow aperture 11 is made in a part opposite to the window aperture 6of the body 3 of the carrier in the insulating film 10 so as to exposethe group of inner leads 7 so that the window aperture 11 is a littlelarger than the window aperture 6 of the body 3 of the carrier.Therefore, the tape carrier 2 is constituted by the body 3 of thecarrier, the group of inner leads 7, the group of outer leads 8, and theinsulating film 10.

[0227] As shown in FIG. 22, a chip 12 is formed in the form of a flatrectangle and desired semiconductor integrated circuits including asemiconductor device are formed on the side of one main surface(hereinafter called the active area side). That is, in the preprocess ofmanufacturing IC, semiconductor integrated circuits are formed on theactive area side of the chip 12 in a state of a semiconductor wafer andthe chip 12 is divided in a flat rectangle in a dicing process. Thesurface of the chip 12 on the active area side is coated with apassivation film 13 and an electrode pad 14 is exposed outside in anopening formed in the passivation film 13. Plural electrode pad 14 areformed and they respectively correspond to each inner lead 7 in the tapecarrier 2. A pair of pads 14A as a characteristic part (hereinaftercalled feature pads) are respectively formed on both sides of a group ofelectrode pads 14 and each feature pad 14A is formed in the form of T todistinguish from the electrode pad 14.

[0228] The chip 12 is mechanically connected to the tape carrier 2 inthe workpiece 1 as shown in FIGS. 20 and 21. That is, the chip 12 isarranged so that each electrode pad 14 corresponds to each inner lead 7in the tape carrier 2, the passivation film 13 and the insulating film10 are bonded and the chip is mechanically connected to the tapecarrier. In this state, each inner lead 7 is opposite to each electrodepad 14 in a position distant upward by the thickness of the insulatingfilm 10 and a bonding layer, and the end of the inner lead 7 is locatedover the electrode pad 14.

[0229] As shown in FIG. 16, a bonding machine 80 is provided with astage 21 and the stage 21 is constituted so that a workpiece 1constituted as described above is horizontally held. As shown in FIG.19, an XY table 22 is installed next to the stage 21 and the XY table 22is constituted so that a bonding head 23 mounted on it is moved in x-and y-directions. One end of a bonding arm 24 to the other end of whicha bonding tool 25 is attached is supported by the bonding head 23 andthe bonding head 23 is constituted so that the bonding tool 25 is liftedor lowered by operating the bonding arm 24. A position detecting sensor26 is attached to the bonding arm 24 and connected to a main controllerdescribed later. A controller 27 for controlling the operation of the XYtable 22 and the bonding head 23 (hereinafter called operatingcontroller) is connected to the XY table 22 and the bonding head 23 anda controller 28 for instructing operation (hereinafter called maincontroller) is connected to the operating controller 27. A display 29 isconnected to the main controller 28.

[0230] An industrial television camera 31 (hereinafter called camera) asan image capturing device for constituting an inner lead recognizingapparatus 30 is attached to the XY table 22 via a stand 36 and thecamera 31 photographs the workpiece 1 on the stage 21. An inner leadrecognizing measuring line setting section 32 (hereinafter calledsetting section) for setting a measuring line for recognizing an innerlead is connected to the camera 31 and a luminance measuring section 33is connected to the setting section 32. A forming section 34 for formingan added luminance distribution waveform is connected to the luminancemeasuring section 33 and a judging section 35 for judging the centerline of an inner lead is connected to the forming section 34. Thejudging section 35 is connected to the main controller 28 to send theresult of the judgment to the main controller 28.

[0231] As shown in FIG. 16, the bonding machine 80 is provided with aloading reel 81 and an unloading reel 82 for carrying the workpiece 1and the workpiece 1 is extended between the loading reel 81 and theunloading reel 82. A spacer tape winding reel 83 is supported under theloading reel 81 and the spacer tape winding reel 83 is constituted sothat a spacer tape 84 after the loading reel 81 lets out the workpieceis wound. A spacer tape supply reel 85 is supported under the unloadingreel 82 and the space tape supply reel 85 is constituted so that aspacer tape 86 is supplied when the unloading reel 82 winds theworkpiece 1.

[0232] As shown in FIGS. 17 and 18, a heat block 88 lifted or lowered bya lifting/lowering driver 87 is equipped in a place in which the stage21 of the bonding machine 80 is set and a concave portion 89 is providedto the upper surface of the heat block 88 to house the chip 12 of theworkpiece 1. A lower presser foot 90 is formed by the outer part of theconcave portion 89 in the upper face of the heat block 88. An upperpresser foot 91 formed in the form of a rectangle which has the sameform as that of the lower presser foot 90 is equipped over the heatblock 88 and the upper presser foot 91 is supported by a rotary actuator92 so that the upper presser foot is reciprocated in a verticaldirection. The upper presser foot 91 fixes the workpiece 1 on the stage21 by being turned to the lower side and pressing the periphery of thechip 12 in the workpiece 1 upon the lower presser foot 90.

[0233] A pair of front and rear guide rails 93 are laid in parallelhorizontally crosswise at both (hereinafter called front and rear) endsof the workpiece 1 in the bonding machine 80. The workpiece 1 ishorizontally guided by both guide rails 93 at both ends of the body 3 ofthe carrier in which the holes 3A are arranged with a group of holes 3Aput between both guide rails 93 so that the workpiece can be slid andsent from the side of the loading reel 81 to the direction of theunloading reel 82.

[0234] A pair of front and rear feed rollers 94 are supported in aposition distant from the stage 21 on the right side of both guide rails93 with the feed rollers in contact with the respective lower surfacesof both ends of the body 3 of the carrier so that the feed rollers canbe rotated and a belt 96 driven by a feed motor 95 is wound on both feedrollers 94. A pair of front and rear press rollers 97 are arranged onthe upper side of both feed rollers 94 via the body 3 of the carrierwith the body 3 of the carrier put between each press roller 97 and eachfeed roller 94, and both press rollers 97 are supported so that they canbe rotated by one end of an arm 99 the other end of which is supportedby a pin 98 so that the other end can be turned in a vertical direction.A spring 100 is fitted in a position near the pin 98 of the arm 99 sothat the spring presses the arm 99 downward and an electromagneticplunger 101 is fitted in a position closer the press roller 97 than tothe spring 100 of the arm 99 so that the electromagnetic plungervertically moves the arm 99.

[0235] A pair of front and rear back tension rollers 102 are supportedin a position distant left from the stage 21 of both guide rails 93 withthe back tension rollers in contact with the respective lower surfacesof both ends of the body 3 of the carrier so that the back tensionrollers can be rotated and a belt 104 driven by a back tension motor 103is respectively wound on both back tension rollers 102. A pair of frontand rear press rollers 105 are arranged on the upper side of the bothback tension rollers 102 via the body 3 of the carrier with the body 3of the carrier put between each press roller 105 and each back tensionroller 102 and both press rollers 105 are supported so that both pressrollers can be rotated by one end of an arm 107 the other end of whichis supported by a pin 106 so that the arm can be turned in a verticaldirection. A spring 108 is fitted in a position near the pin 106 of thearm 107 so that the spring presses the arm 107 downward and anelectromagnetic plunger 109 is fitted in a position closer the pressroller 105 than to the spring 108 of the arm 107 so that theelectromagnetic plunger 109 vertically moves the arm 107.

[0236] A hole inspection hole 110 is made in a position distant rightfrom the stage 21 of the rear guide rail 93 in the form of a rectanglelarger than the hole 3A made on the body 3 of the carrier and aphotosensor 111 as a hole detecting device is equipped over the holeinspection hole 110 with the photosensor supported by a stand and thelike. The photosensor 111 is constituted so that it detects the hole 3Avia the hole inspection hole 110. A workpiece position controller 112for controlling the position of the workpiece 1 based upon the passageof the hole 3A is connected to the photosensor 111 and the controller112 is constituted so that it controls the feed motor 95, the backtension motor 103 and the electromagnetic plungers 101 and 109 asdescribed later.

[0237] A bonding method by the bonding machine constituted as describedabove will be described below.

[0238] First, a method of supplying a workpiece to the stage andpositioning it on the stage will be described. In the description, aninterval p (one pitch) between adjacent chips 12 in the carrier 2 areassumed to be set to a dimension equivalent to four holes 3A includingrespective intervals in the carrier 2 as shown in FIG. 23.

[0239] As the arm 99 is turned downward by the spring 100 as shown inFIG. 17 when the electromagnetic plunger 101 on the feeding side isextended and operated according to a preset sequence in a state shown inFIG. 16, the press roller 97 holds the body 3 of the carrier between thepress roller and the feed roller 94 by force by the spring 100.Simultaneously, as the arm 107 is turned upward according to the forceof the spring 108 when the electromagnetic plunger 109 on the side ofback tension is reduced, the press roller 105 releases a state in whichthe body 3 of the carrier is held between the press roller and the backtension roller 102. Next, when the feed roller 94 is rotated by the feedmotor 95 according to a preset sequence, the body 3 of the carrier heldbetween the feed roller 94 and the press roller 97 is fed from the sideof the loading reel 81 to the side of the unloading reel 82.

[0240] When the carrier 2 is fed by three pitches in pitch betweenadjacent holes 3A by the above feed, the position of the photosensor 111is relatively moved from a feed start position J1 to a second positionJ2. At this time, as the feed roller 94 and the press roller 97 arerespectively slid, the second position J2 is unsettled.

[0241] When the carrier 2 is fed by the feed motor 95 by two pitches(2×P) in pitch P between adjacent holes 3A, the electromagnetic plunger109 on the side of back tension is extended and operated according to apreset sequence. As the arm 107 is turned downward by the force of thespring 108 when the electromagnetic plunger 109 on the side of backtension is extended, the press roller 105 holds the body 3 of thecarrier between the press roller and the back tension roller 102 by theforce of the spring 108. Next, when the back tension roller 102 isrotated by the back tension motor 103, the body 3 of the carrier heldbetween the back tension roller 102 and the press roller 105 is pulledfrom the side of the loading reel 81 to the side of the unloading reel82. Hereby, the looseness of the carrier 2 is removed.

[0242] Next, the feed motor 95 is operated to feed the carrier 2 by onepitch (1×P) in pitch between adjacent holes 3A. According to the abovefeed, the position of the photosensor 111 is relatively moved to thethird position J3, the fourth position J4 and the fifth position J5 asshown in FIG. 23. However, when the photosensor 111 detects the edge ofthe opening on the upstream side of the hole 3A while the photosensorpasses the third position J3, it stops the feed motor 95. When the feedmotor 95 is stopped, the photosensor 111 is relatively stopped in anarbitrary position between the third position J3 and the fourth positionJ4, that is, in a middle position in the hole 3A.

[0243] Next, the feed motor 95 is operated to feed the carrier 2 bylength equivalent to one width (1×W) in the width W of the hole 3A.According to the above feed, the position of the photosensor 111securely exceeds the fourth position J4. However, when the photosensor111 detects the edge of the opening on the downstream side of the hole3A while the photosensor passes the fourth position J4, the photosensorstops the feed motor 95. Hereby, the photosensor 111 is relativelystopped in the fourth position J4.

[0244] Next, the feed motor 95 feeds the carrier 2 by a presetcorrection value K so that the carrier is located in a position in whichthe center of the stage 21 and the center of the chip 12 are aligned andis stopped. According to the above feed and stop, the photosensor 111 isrelatively stopped in the fifth position J5. As the fifth position J5 isalways a fixed position determined by the correction value K betweenadjacent holes 3A, the workpiece 1 is supplied in an always fixedrelated position on the stage 21 and stopped.

[0245] As described above, according to constitution that the edge ofthe opening on the downstream side of the hole 3A (In this embodiment, aconventional type sprocket hole is not used for a sprocket hole forfeed. In this embodiment, the hole 3A is an opening for detectingposition in a suitable form such as a rectangle and a square which isnumerously made in a suitable position of a tape in a row or plural rowsat a single or multiply period in the longitudinal direction of thetape.) of the carrier 2 is detected by the photosensor 111 and thecarrier 2 is fed by a predetermined correction value K from the aboveposition of the edge, as various changes can be promptly processed bythe simple operation of suitably inputting the length of new pitch, thenew number of pitches and a new correction value K even if the size ofthe chip 12 and the length of the inner lead 7 and the outer lead 8 arechanged or even if pitch between the holes 3A and the size of the hole3A are changed, hybrid production such as change in a type is allowedand in the meantime, the generality of a bonding machine can beenhanced.

[0246] When the workpiece 1 is supplied to a preset fixed position onthe stage 21 and stopped there as described above, the heat block 88 islifted by the lifting/lowering driver 87 and the upper presser foot 91is lowered by the rotary actuator 92. As the workpiece 1 is pressed uponthe lower presser foot 90 of the heat block 88 by the lowering of theupper presser foot 91, it is positioned on the stage 21. As the lowersurface of the chip 12 of the workpiece 1 is in contact with the bottomof the concave portion 89 of the heat block 88, the chip 12 is heated bythe heat block 88.

[0247] When the workpiece is positioned on the stage, positionalrelationship between an inner lead in the workpiece and an electrode padis measured by a method described next and suitably corrected.

[0248] As described above, as the workpiece 1 is always stopped on thestage 21 according to preset positional relationship, the center of thecamera 31 and the center of the workpiece 1 can be approximately alignedas shown in FIG. 24 for example. If the center of the camera 31 islocated in an origin 0 on the coordinates of the workpiece 1 as shown inFIG. 24, a position on the coordinates of the feature lead 9A on theleft side can be acquired from the design data of the workpiece 1.

[0249] As shown in FIG. 24(b), a cutout window for the camera 31 is setto a position on the coordinates of the feature lead 9A on the leftside. As in an actual workpiece 1, the body 3 of the carrier, the hole3A and the like are not always formed according to a design value, anerror (ΔXa, ΔYa) occurs between an actual feature lead 9A and a featurelead 9A′ in design as shown in FIG. 24 (b) for example The above error(ΔXa, ΔYa) is acquired according to the following algorithm.

[0250] First, an actual feature lead 9A photographed by the camera 31 isrecognized as an image and the central coordinates (Xa, Ya) for theorigin O are acquired based upon the above recognition. Next, differencebetween the above central coordinates (Xa, Ya) and the centralcoordinates (Xa′, Ya′) of a feature lead 9A in design for the origin Ois acquired. The value of the above difference is equivalent to thevalue of the above error (ΔXa, ΔYa).

[0251] Next, as shown in FIG. 24(c), the cutout window for the camera 31is set to a position on the coordinates of a feature pad 14A on the leftside. As in an actual workpiece 1, the chip 12 is not always fixed onthe body 3 of the carrier according to design, an error (ΔXb, ΔYb)occurs between an actual feature pad 14A and a feature pad 14A′ indesign as shown in FIG. 24(c) for example. The value of the above error(ΔXb, ΔYb) is acquired according to the same algorithm as in the case ofthe feature lead 9A.

[0252] Next, the value of an error related to a feature lead 9A and afeature pad 14A on the right side is respectively acquired by the samemethod. The value of an error related to the coordinate position of eachinner lead 7 in design and the coordinate position of each electrode pad14 in design is respectively acquired by statistical processing forthese values of errors. The respective values of errors and presetallowance values are compared. If the value of an error is out of arange, it is warned that correction is impossible. If the value of anerror is in a range, each correction value between opposite inner lead 7and electrode pad 14 is acquired.

[0253] As described above, bonding operation for an uncorrectable errorcan be omitted by acquiring positional relationship between each innerlead 7 and each electrode pad 14 using the feature lead 9A and thefeature pad 14A and if correction is allowed, the precision of bondingcan be enhanced by correction. Further, the cutout window for the camera31 can be precisely set to relational position between each inner lead 7and each electrode pad 14 by an inner lead recognition method describednext.

[0254] When positional relationship between an inner lead and anelectrode pad in a workpiece is acquired as described above, the innerlead recognition method shown in FIG. 25 is executed.

[0255] As shown in FIG. 19, the main controller 28 drives the XY table22 and moves the camera 31 in a position for an inner lead 7 to bebonded to be photographed in the workpiece 1 loaded on the stage 21. Atthis time, the positional coordinates of the inner lead 7 acquired asdescribed above are used. The camera 31 executes the image capturingprocess 41 shown in FIG. 1 and photographs an inner lead 7 to be bonded.An image 51 photographed by the camera 31 and shown in FIG. 25(a) isdisplayed on the display 29 and input to the setting section 32.

[0256] The setting section 32 executes the inner lead recognizingmeasuring line setting process 42, sets one image scanning lineincluding an electrode pad 14 of image scanning lines respectivelyperpendicular to an inner lead 7 in the image 51 to an inner leadrecognizing measuring line corresponding to an electrode pad(hereinafter called central measuring line) 52 and sets two imagescanning lines on both sides of the electrode pad 14 to each inner leadrecognizing measuring line outside an electrode pad (hereinafterrespectively called inner end measuring line and outer end measuringline) 53 and 54.

[0257] A luminance measuring section 33 executes the luminance measuringprocess 43, measures luminance at each point on each scanning line everythe central measuring line 52, the inner end measuring line 53, and theouter end measuring line 54 and forms a central measuring line luminancewaveform 52 a, an inner end measuring line luminance waveform 53 a, andan outer end measuring line luminance waveform 54 a as shown in FIGS.25(b), (c), and (d). These central measuring line luminance waveform 52a, inner end measuring line luminance waveform 53 a, and outer endmeasuring line luminance waveform 54 a are input to a forming section34.

[0258] The forming section 34 executes the formation process 44 andforms an added luminance distribution waveform 55 shown in FIG. 25(e) byaligning each point on each scanning line in the central measuring lineluminance waveform 52 a, the inner end measuring line luminance waveform53 a, and the outer end measuring line luminance waveform 54 a shown inFIGS. 25(b), (c), and (d), that is, by equalizing time series andoverlapping each waveform. That is, luminance in the central measuringline luminance waveform 52 a, the inner end measuring line luminancewaveform 53 a, and the outer end measuring line luminance waveform 54 ais added at every point and the added luminance distribution waveform 55is formed. The added luminance distribution waveform 55 is input to ajudging section 35.

[0259] The judging section 35 executes the judging process 45 shown inFIG. 1 and first, sets a threshold value 56 of the added luminancedistribution waveform 55 as shown in FIG. 25(f). Next, the center ofgravity 58 in an area 57 equal to or larger than the threshold value 56in the added luminance distribution waveform 55 is calculated and aposition opposite to the center of gravity 58 is judged to be theposition 59 of the center line of the inner lead 7 to be bonded. Thatis, the above shows that the position of the inner lead 7 to be bondedis precisely recognized.

[0260] The inner lead 7 is precisely bonded to the electrode pad 14 bythe bonding tool 25 as shown in FIG. 26 by aligning the center line ofthe bonding tool 25 of the bonding machine 20 with the position 59 ofthe center line of the inner lead 7 acquired as described above byoperating the XY table 22 under the control of the operating controller27 according to the instruction of the main controller 28.

[0261] As shown in FIG. 26(a), the bonding tool 25 pushes down a partover the electrode pad 14 of the inner lead 7 up to a height in anextent that the bonding tool 25 does not reach on the upper surface ofthe chip 12 via the inner lead 7. The main controller 28 judges byanalyzing positional data from the position detecting sensor 26 equippedin the bonding arm 24 whether the bonding tool 25 reaches the uppersurface of the chip 12 via the inner lead 7 or not.

[0262] When the bonding tool 25 pushes down the end of the inner lead 7up to a predetermined height, it is moved in parallel in the directionof the base supported by the insulating film 10 of the inner lead 7 asshown in FIG. 26(b). As the bonding tool is moved in parallel, the innerlead 7 is curved in the shape of a letter S as a whole. That is, thebase of the inner lead 7 is bent in a looped form which does not causedistortion and the lower surface of the end is touched to the uppersurface of the electrode pad 14.

[0263] At this time, not only the bonding tool 25 is horizontally movedafter it is lowered vertically but the bonding tool 25 may also belowered diagonally as shown by the locus of an imaginary line in FIG.26(b).

[0264] Next, as shown in FIG. 26(c), the bonding tool 25 is returnedover the center of the electrode pad 14 and next, the bonding tool 25 islowered vertically. The bonding tool 25 presses the end of the innerlead 7 upon the electrode pad 14 by the above lowering. The bonding tool25 presses the end of the inner lead 7 upon the electrode pad 14 andbonds the end of the inner lead to the electrode pad bythermocompression by applying heat and ultrasonic energy. That is, theinner lead 7 is bonded to the electrode pad 14 by the bonding tool 25.

[0265] Afterward, the chip 12 is electrically connected to the tapecarrier 2 by repeating the above inner lead recognition method andbonding method every inner lead 7. In bonding every inner lead 7, beforethe inner lead 7 is bonded to the electrode pad 14 of the chip 12 by thebonding tool 25, the position 59 of the center line of the inner lead 7is recognized and bonding by the bonding tool 25 is respectivelyexecuted under an optimum condition corresponding to the recognizedposition 59 of the center line.

[0266] When the above-bonding operation of all inner leads 7 isfinished, the tape carrier 2 is fed by one pitch p by the aboveoperation according to the above method of supplying a workpiece to thestage and positioning it. Afterward, the bonding of the workpiece 1 letout from the loading reel 81 is successively executed by repeating theabove processes.

[0267] Afterward, as shown in FIG. 15, in a resin sealed body formingprocess in the method of manufacturing μBGA•IC, a group of inner leads 7and a group of electrode pads 14 are sealed by a resin sealed part 15 bypotting insulating material such as elastomer and silicon rubber insideeach window aperture 6 of the tape carrier 2 as shown in FIG. 27.

[0268] Also, in a bump forming process in the method of manufacturingμBGA•IC, a bump 16 protruded from the upper surface of the bumpformation part 4 is formed on the tape carrier 2 as shown in FIG. 27 bysoldering a solder ball in a part exposed at the bottom of each bumphole 5 of each outer lead 8 of the tape carrier 2.

[0269] By the above manufacturing method, μBGA•IC 17 shown in FIG. 28 ismanufactured.

[0270] Next, a bonding method shown in FIGS. 29 to 33 in which bondingby a bonding tool is executed after the height of a chip is measuredwill be described.

[0271] As shown in FIG. 29, when the bonding tool 25 pushes down the endof the inner lead 7, the inner lead 7 is curved downward with it theupper edge of the window aperture 11 of the insulating film 10 as astarting point.

[0272] As shown in FIG. 30, when the bonding tool 25 is further lowered,the end of the inner lead 7 is pushed down and touched to the uppersurface of the chip 12.

[0273] The main controller 28 judges by analyzing positional data fromthe position detecting sensor 26 whether the bonding tool 25 reaches theupper surface of the chip 12 via the inner lead 7 or not. If it isjudged that the bonding tool 25 does not reach the upper surface of thechip 12, the main controller 28 gradually lowers the bonding tool 25 andtouches it to the upper surface of the chip 12 via the inner lead 7.

[0274] If it is judged that the bonding tool 25 reaches the uppersurface of the chip 12 via the inner lead 7, the main controller 28reads positional data from the position detecting sensor 26 when thebonding tool reaches and measures the height of the bonding tool fromthe upper surface of the chip 12.

[0275] The main controller 28 which finishes measuring the height of thebonding tool 25 lifts the bonding tool 25 by a predetermined height H asshown in FIG. 31. An optimum value of the predetermined height Hcorresponding to each bonding condition is acquired by an empiricalmethod such as an experiment, simulation by a computer and past provendata and stored in the main controller 28 beforehand. The maincontroller 28 instructs the predetermined height H to the operatingcontroller 27. The operating controller 27 lifts the bonding tool 25 bythe predetermined height H by controlling the bonding head 23 andoscillating the bonding arm 24.

[0276] When the bonding tool 25 is lifted by the predetermined height H,the end of the inner lead 7 is a little lifted by the spring back of theinner lead 7 from the upper surface of the chip 12 as shown in FIG. 31.In a state in which the end of the inner lead 7 is lifted from the chip12, the bonding tool 25 lifted by the predetermined height H is distantfrom the upper surface of the end of the inner lead 7.

[0277] Next, as shown in FIG. 32, the bonding tool 25 is moved inparallel to a predetermined position (In this case, it depends upon thelength of a free part of a lead and difference between the base of thelead and the height of a pad how far the bonding tool is to be pushedthrough the pad. In case the bonding tool is pushed through the end ofthe pad if the length of the free part is normal, a relativelysatisfactory form is acquired.) through over the center of the electrodepad 14 in the direction of the bump formation part 4 with the bondingtool 25 maintained at the height as it is. As the inner lead 7 isshifted in the direction of the bump formation part 4 by the bondingtool 25 and is pushed diagonally downward as the bonding tool is movedin parallel, the middle part is in a predetermined looped form (anS-type forming process) and the lower surface of the end is touched tothe upper surface of the electrode pad 14.

[0278] Next, as shown in FIG. 33, after the bonding tool 25 is moved toa position over the electrode pad 14, it is lowered vertically. By theabove lowering, the end of the inner lead 7 is pressed on the electrodepad 14 by predetermined force by the bonding tool 25 with the endforming a predetermined looped form. The bonding tool 25 presses the endof the inner lead 7 on the electrode pad 14 and bonds the end of theinner lead to the electrode pad by thermocompression by applying heatand ultrasonic energy. That is, the inner lead 7 is bonded to theelectrode pad 14 by the bonding tool 25.

[0279] As described above, as each inner lead 7 can be bonded to eachelectrode pad 14 in a suitable looped form in any case by successivelymeasuring a height from the electrode pad 14 of the chip 12 to thebonding tool 25 and executing bonding by the bonding tool 25 under anoptimum condition corresponding to each measured height before the innerlead 7 is bonded to the electrode pad 14 of the chip 12 by the bondingtool 25, the quality, the reliability, and the yield of μBGA•IC 17 canbe enhanced.

[0280] For example, as bonding by the bonding tool 25 is executed underan optimum condition corresponding to the following error every innerlead 7 even if an error in an interval between the inner lead 7successively bonded by the bonding tool 25 and the electrode pad 14occurs because the chip 12 mechanically connected under the bumpformation part 4 via the insulating film 10 is tilted, the looped formof each inner lead 7 after bonding can be suitably formed.

[0281] If an error in an interval between the inner lead 7 and theelectrode pad 14 is small, it reduces operation time to prevent theinner lead 7 from being touched to the chip 12 by the bonding tool 25and is advantageous.

[0282] As bonding operation can be completed on the same stage bycontinuously executing the measurement of a height and bonding after themeasurement by a series of operation of the same bonding tool 25, timerequired for bonding operation can be reduced and the structure of thebonding machine can be simplified.

[0283] The bonding tool 25 not only controls in the locus described inthe above embodiment but it may also control as in a locus shown in FIG.34 for example.

[0284] As shown in FIG. 34, ‘S’ shows a movement starting point and ‘E’shows a movement end point. The movement starting point S is set in theend of an inner lead or a notch and the movement end point E is set inan electrode pad.

[0285] A locus shown in FIG. 34(a) can set an index earliest.

[0286] A locus shown in FIG. 34(b) can form an inner lead in the form ofa letter S.

[0287] A locus shown in FIG. 34(c) can detect the surface of a chip andis effective when dust and others come between a stage and a chip andheight changes if the chip is tilted.

[0288] A locus shown in FIG. 34(d) is effective to cut an inner leadwhich crosses a window aperture and is also effective to form an innerlead.

[0289] A locus shown in FIG. 34(e) can form an inner lead in the form ofa letter S and can also detect the surface of a chip.

[0290] A locus shown in FIG. 34(f) can also form an inner lead in theform of a letter S and is effective to cut an inner lead which crosses awindow aperture.

[0291] A locus shown in FIG. 34(g) can detect the surface of a chip, iseffective to cut an inner lead which crosses a window aperture, and isalso effective to form an inner lead.

[0292] A locus shown in FIG. 34(h) can form an inner lead in the form ofa letter S, can detect the surface of a chip, is effective to cut aninner lead which crosses a window aperture and is also effective to forman inner lead.

[0293] In each drawing of FIGS. 34, vertical and horizontal movement mayalso be set to diagonal movement.

[0294] Effect acquired by typical ones of the inventions disclosed inthe present invention will be described briefly below.

[0295] As a bonding tool can be precisely aligned with an inner lead bysuccessively recognizing the position of the center line of the innerlead before the inner lead is bonded to an electrode pad of a chip bythe bonding tool when the inner lead is bonded to the electrode pad bythe bonding tool, each inner lead can be suitably bonded to eachelectrode pad.

[0296] As an area equal to or larger than a threshold value in an addedluminance distribution waveform can be formed so that the area is highby forming the added luminance distribution waveform by adding luminancein a central measuring line luminance waveform, an inner end measuringline luminance waveform and, an outer end measuring line luminancewaveform at each of the same points and setting the threshold values forthe added luminance distribution waveform, the position of an inner leadcan be precisely recognized independent of the existence of an electrodepad as the background of the inner lead.

[0297] As each inner lead can be bonded to each electrode pad in asuitable looped form by measuring a height from a chip to a bonding tooland executing bonding by the bonding tool under an optimum conditioncorresponding to the measured height before the inner lead is bonded tothe electrode pad of the chip by the bonding tool when the inner lead isbonded to the electrode pad by the bonding tool, the quality, thereliability, and the yield of a semiconductor device can be enhanced.

[0298] As an inner lead can be prevented from being distorted in bondingthe inner lead when the inner lead is bonded to an electrode pad of achip, stress due to distortion can be prevented beforehand from beingleft in the inner lead after bonding.

What is claimed is:
 1. A method of manufacturing a semiconductorintegrated circuit,-comprising: (a) supplying to a lead bonding machinea chip-lead complex tape in which multiple semiconductor integratedcircuit chips are fixed on a carrier tape provided with a wiring patternincluding multiple inner leads; (b) optically observing one unit areaincluding one chip of said multiple chips on said supplied chip-leadcomplex tape in said lead bonding machine; (c) correcting positionalrelationship between said lead in a plane parallel to a first mainsurface of said chip and a pad by transforming an inner lead projectedfrom the surface of said carrier tape to be connected to the bonding padon the first main surface of said one chip based upon the result of saidobservation in said lead bonding machine; and (d) connecting said leadsaid and pad by a bonding tool after said lead is corrected in said leadbonding machine.
 2. A method of manufacturing a semiconductor integratedcircuit according to claim 1 , wherein: said lead is transformed by saidbonding tool.
 3. A method of manufacturing a semiconductor integratedcircuit according to claim 2 , wherein the bonding of said lead isexecuted for every lead by said bonding tool.
 4. A method ofmanufacturing a semiconductor integrated circuit according to claim 3 ,wherein a unit area on said chip-lead complex tape corresponds to oneunit or plural units of a chip-sized package.
 5. A method ofmanufacturing a semiconductor integrated circuit, comprising: (a)supplying to a lead bonding machine a chip-lead complex tape in whichmultiple semiconductor integrated circuit chips are fixed on a carriertape provided with a wiring pattern including multiple inner leads; (b)detecting relative positional relationship among said lead bondingmachine, said pad, and lead by optically observing one unit areaincluding one chip of said multiple chips on said supplied chip-leadcomplex tape in said lead bonding machine; (c) correcting relativepositional relationship between said lead in a plane parallel to a firstmain surface of said chip to be connected to a bonding pad on the firstmain surface of said one chip and said pad based upon the result of saiddetection in said lead bonding machine; and (d) connecting said lead andsaid pad by a bonding tool after said correction in said lead bondingmachine.
 6. A method of manufacturing a semiconductor integrated circuitaccording to claim 5 , wherein the bonding of said lead is executed forevery lead by said bonding tool.
 7. A method of manufacturing asemiconductor integrated circuit according to claim 6 , wherein a unitarea on said chip-lead complex tape corresponds to one unit or pluralunits of a chip-sized package.
 8. A method of manufacturing asemiconductor integrated circuit, comprising: (a) supplying to a leadbonding machine a chip-lead complex tape in which multiple semiconductorintegrated circuit chips are fixed on a carrier tape provided with awiring pattern including multiple inner leads; (b) in said lead bondingmachine, moving one unit area including one chip of said multiple chipson said supplied chip-lead complex tape to a position for executingbonding; (c) in said lead bonding machine, pushing down with a bendingtool the end of an inner lead or its vicinity from on said carrier tapemoved to a bending position in said unit area over the corresponding padof a chip in the same area; (d) forming said inner lead by pushing saidpushed-down inner lead in the direction of the base of said inner leadacross said pad area with said bonding tool and transforming it in saidlead bonding machine; and (e) bonding said lead and pad by pressing saidformed inner lead upon said pad by said bonding tool.
 9. A method ofmanufacturing a semiconductor integrated circuit according to claim 8 ,wherein said pushing-down process is continued until said bonding toolreaches the surface of said chip via said inner lead.
 10. A method ofmanufacturing a semiconductor integrated circuit according to claim 9 ,wherein the bonding of said lead is executed for every lead by saidbonding tool.
 11. A method of manufacturing a semiconductor integratedcircuit according to claim 10 , wherein a unit area on said chip-leadcomplex tape corresponds to one unit or plural units of a chip-sizedpackage.
 12. A method of manufacturing a semiconductor integratedcircuit, comprising: (a) supplying a chip-lead complex tape in whichmultiple semiconductor integrated circuit chips are fixed on a carriertape provided with wiring including an inner lead with said tape woundon a loading reel; (b) carrying on a friction roller said each lead andeach bonding pad of said chip to a part for bonding by successivelyunwinding said chip-lead complex tape wound on said loading reel andsupplying them; and (c) winding said chip-lead complex tape on anunloading reel after bonding is finished.
 13. A method of manufacturinga semiconductor integrated circuit according to claim 12 , wherein thecarriage of said chip-lead complex tape is controlled by opticallydetecting an opening provided at regular intervals in the direction ofthe length of a carrier tape.
 14. A method of manufacturing asemiconductor integrated circuit,-comprising: (a) supplying to a leadbonding machine a chip-lead complex tape in which multiple semiconductorintegrated circuit chips are fixed on a carrier tape provided with awiring pattern including multiple inner leads; (b) moving one unit areaincluding one chip of said multiple chips on said supplied chip-leadcomplex tape to a position for executing bonding in said lead bondingmachine; (c) pushing down with a bonding tool in said lead bondingmachine the vicinity of the end of an inner lead which is set so thatthe end of the inner lead is located in an opening through the openingof a tape over the corresponding pad of a chip in said unit area from onsaid carrier tape moved to a bonding position in the same area, that is,a lead on the reverse side to said inner lead in a part to be cut whichis formed so that it is weaker than the other part; (d) forming saidinner lead by transforming said inner lead cut as a result of pushingdown with said bonding tool in said lead bonding machine; and (e)bonding said lead and said pad by pressing said formed inner lead uponsaid pad with said bonding tool.
 15. A method of manufacturing asemiconductor integrated circuit, comprising: (a) supplying to a leadbonding machine a chip-lead complex tape in which multiple semiconductorintegrated circuit chips are fixed on a carrier tape provided with awiring pattern including multiple inner leads; (b) moving one unit areaincluding one chip of said multiple chips on said supplied chip-leadcomplex tape to a position for executing bonding in said lead bondingmachine; (c) diagonally pushing down with a bonding tool in said leadbonding machine the end of an inner lead or the vicinity which is set sothat the end of the inner lead is located in an opening through theopening of a tape over the corresponding pad of a chip in said unit areafrom on said carrier tape moved to a bonding position in the same areafrom the reverse side to said inner lead in a part to be cut which isformed so that it is weaker than the other part to the side of the baseof said inner lead; (d) forming said inner lead by transforming saidinner lead cut as a result of pushing down by said bonding tool in saidlead bonding machine in said lead bonding machine; and (e) bonding saidlead and pad by pressing said formed inner lead upon said pad by saidbonding tool.
 16. A lead bonding machine, wherein a chip-lead complextape in which a semiconductor integrated circuit chip is fixed on acarrier tape is supplied with the tape wound on a loading reel and afterthe tape is carried using a friction roller and a lead is bonded to abonding pad on said semiconductor integrated circuit chip, the tape iswound on an unloading reel.
 17. A lead bonding machine according toclaim 16 , wherein if correction is required, the bonding of said leadis executed after positional relationship between a lead and thecorresponding bonding pad is corrected by transforming the inner lead ofsaid lead.
 18. A lead bonding machine according to claim 17 , whereincorrection by transforming said lead is executed based upon the resultof optically observing positional relationship between a lead and abonding pad if necessary.
 19. A lead bonding machine according to claim18 , wherein the bonding of said lead is executed for every lead by abonding tool.
 20. A lead bonding machine according to claim 19 , whereincorrection by transforming said lead is executed for every lead by saidbonding tool.